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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Migration Enhanced of (SiC)x(AIN)1-x

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  2. Gas Microcontroller

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Many key steps in semiconductor "chip" manufacture utilize gases to form thin films which are critical to both device performance and cost. Over $2 billion worth of equipment, materials and peripherals are now sold annually to the semiconductor manufacturers who use gas phase processing. As increased memory demands escalate the need for thinner films, higher quality and lower costs, ever more exac ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  3. Low Loss Cryogenic Switching for Electronic Warfare

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    High temperature superconducting (HTSC) materials offer the potential for major cost and performance advantages in advanced high frequency communications and radar sytems. Key to the use of these materials in subsystems is the fabrication of components, especially low loss switches, which can replace standard components. Advanced Technology Materials, Inc., in conjunction with Harris Corporation, ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  4. HTSCs as Electrodes in DRAMs

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continuing drive toward increased circuit densities in dynamic random access memories (DRAMs) has spurred great interest in new dielectric materials that permit greater storage capacitor charge density. Ferroelectrics are particularly attractive because of their intrinsically large dielectric constant, and non-volatile and radiation-hard memory capability. Application of ferroelectrics in micr ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  5. Organoerbium Source Reagents for MOCVD of Erbium-Containing Alloys

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The use of optoelectronic materials, such as gallium arsenide, in applications ranging from fiber optics to solid-state lasers has been growing rapidly. The fabrication of these materials requires exacting control over material composition, purity, uniformity and production rate. Typically these materials contain small amounts of rare earth dopants or impurities which are designated to enhance the ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  6. Ferroelectric Films for IR Focal Plane Array Storage Capacitors

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Infrared radiation sensing has grown rapidly as both a military and commercial detection and measurement technique. Recently the sensitivity of infrared detection has been improved by the used of focal plane arrays which have the capability of imaging scenes of very low contrast by collecting radiation over long periods of time. This technique can be dramatically enhanced by the use of new materia ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  7. Negative Electron Affinity Diamond Vacuum Collector Transistor

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  8. Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  9. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
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