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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. PULSE DETONATION SYNTHESIS FOR HIGH TEMPERATURE CERAMIC COMPOSITES AND COATINGS

    SBC: Adroit Systems, Inc.            Topic: N/A

    Adroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. MULTI LEVEL SECURE IMAGE OPERATING SYSTEM

    SBC: ARIES Technology Corporation            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. Optic Bistable Device with Low Threshold-Intensity (mw/cm2)

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    BRIMROSE CORPORATION PROPOSES TO INVESTIGATE, DESIGN AND DEMONSTRATE A NOVEL OPTICAL BISTABLE DEVICE WITH A THRESHOLD OPTICAL INTENSITY SEVERAL ORDERS OF MAGNITUDE LOWER THAN THE CONVENTIONAL DEVICES. THIS DEVICE WILL OPERATE AT ROOM TEMPERATURE USING A LOW POWER CW LASER. ADVANTAGE OF SUCH A DEVICE WILL SIGNIFICANTLY FACILITATE THE NUMBER OF PROCESSING OPERATIONS IN OPTICAL COMPUTING AND SIGNAL P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  5. Long Wave IR HgZnTe

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    IR DETECTOR MATERIAL, MERCURY CADMIUM TELLURIDE HAS BEEN THE MOST MATURES AND OFTEN A MATERIAL OF CHOICE FOR ADVACNED INFRARED DETECTION. HOWEVER, IT IS EXTREMELY DIFFICULT TO PRODUCE THE MATERIAL FOR DETECTION AT A WAVELENGTH GREATER THAN 14um. THIS PROBLEM IS DUE TO EXCCESSIVE FUNNELLING AND SURFACE LEAKAGE RELATED TO DARK CURRENTS. IN RECENT YEARS MERCURY ZINC TELLURIDE (MZT) HAS EMERGED AS A S ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. Infrared Detectors Using Mercury Manganese Telluride

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    In the proposed research we will investigate methods for improving the performance of very long wavelength infrared (VLWIR) photovoltaic detectors fabricated from Hg1-xMnxTe. This material was chosen because Hg1-xMnxTe has been shown to have superior mechanical, chemical and thermal stability compared Hg1-xCdxTe. During previously SBIR-BMDO funded work, Brimrose Corporation successfully fabricate ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. InP Solar Cell on Porous Silicon for Improved Solar Energy Conversion

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Brimrose Corporation has developed a novel low-temperature and low energy ion-beam assisted growth process for minimizing the problems and improving the quality of the hetero epitaxial films of III-V compound semiconductors on foreign substrates such as silicon, germanium, etc. The improvement in the quality of hetero epitaxial InP/Si films will be achieved by using this novel low temperature grow ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  8. AlxGa(1-x)N Solar Blind Detector Material Device Structure Growth & Evaluation

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Phase I technical objectives of Brimrose Corporation are two fold. They are: 1) Epitaxial growth of AlxGa1-xN solar blind detector material device structure on new lattice and thermal matched substrates and evaluation of the material properties. The film growth will be carried out in Brimrose Corporation's 'Novel' ECR MOMBE Reactor using rare earth permanent magnets; 2) Preliminary epitaxial growt ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  9. Novel Photorefractive Time-Integrating Detector for the Radar Signal Processing

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Using newly developed II-VI photorefractive semiconductors as time integrator and high performance TeO2 acousto optic deflectors (AODs), Brimrose proposes to develop a compact RF signal processor useful in radar signal processing. The high sensitivity of this relatively new photorefractives, in the wavelength range of 0.63ym to 1.6,um, will allow signal processing using low power near infrared las ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Optical Power Limiters

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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