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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Embedded Sensors via Laser Engineered Net Shaping

    SBC: OPTOMEC, INC.            Topic: N/A

    Optomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. Solid-State Spray Forming of Near-Net-Shape Structural Materials

    SBC: INNOVATIVE TECHNOLOGY INC            Topic: N/A

    The objective of this research is to demonstrate the feasibility of spray forming aluminum Metal Matrix Composites (MMC) in the solid-state physical form as a light weight structural material. It is anticipated that this innovative manufacturing process will provide opportunities to fabricate near-net-shape spacecraft and interceptor structures with unique material properties. The process called S ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Object-Oriented Hierarchical Tool for Large-Scale Development

    SBC: MZA ASSOCIATES CORPORATION            Topic: N/A

    We propose to develop a novel and ambitious tool for large-scale development: a fourth-generation computer language (4GL) based upon an object-oriented generalization of the hierarchical block diagram paradigm, with powerful integrated simulation capabilities. Developers would assemble a prototype in a connect-the-blocks visual programming environment, test and evaluate it via simulation, then ite ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  9. Fabrication of Angstrom Wide Notch Filters Using Laser Induced Densification.

    SBC: RUGATE TECHNOLOGIES, INC.            Topic: N/A

    A unique method for producing very stable, sub-angstrom wide, reflection notch, and bandpass filters, with high optical rejection is proposed. This method takes advantage of a subtle process observed in vacuum ultra-violet (VUV) lithographic systems using fused silica optics known as, laser induced compaction. Multiple exposures of high power excimer radiation induces very small index of refractio ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
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