You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Embedded Sensors via Laser Engineered Net Shaping

    SBC: OPTOMEC, INC.            Topic: N/A

    Optomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Adaptive Signal Conditioning and Calibration of Microelectromechanical Systems (MEMS)

    SBC: IC TECH, INC.            Topic: N/A

    A strong analogy exists between today's MEMS device and the first prototypes of the transistor. Research and development in semiconducto devices made the integration of millions of transistors into a single chip possible. It is anticipated that similar market forces will deman the integration of hundreds and later thousands of MEMS based sensors and actuators onto the same substrate in the next de ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. Joining of Ceramic Composite Materials

    SBC: NANOCEROX, INC..            Topic: N/A

    Ceramic/ceramic composites are high performance structural elements in many military and commercial applications. Cost-effective methods of producing mechanically strong bonds between ceramic composite components during fabrication of complex shapes are critical to achieving next generation performance targets for both industrial (automotive) and military (aerospace) applications. Existing materia ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Optical Techniques for Tbits/Second Communication

    SBC: CLARK-MXR, INC.            Topic: N/A

    This program will demonstrate key enabling technologies for Terabit/second optical fiber networks capable of meeting critical DoD needs. Optical network technology offers characteristics that satisfy many DoD requirements. These characteristics include improved data handling through multiwavelength transmission in single optical fibers; enhanced network security; greater inter-network operabilit ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  9. Thin-film Nonlinear Optical Material: Ordered Ga(1-x)In(x)P On GaAs

    SBC: Spire Corporation            Topic: N/A

    GROWTH OF OEDERED Ga(1-x)In(x)P ON GaAs, AS A THIN FILM MATERIAL SHOWING VERY STRONG NONLINEAR OPTICAL (nlo) EFFECTS, WILL BE ACCOMPLISHED BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). IT IS WELL KNOWN THAT MOCVD-GROWN Ga(1-x)In(x)P DISPLAYS VERY STRONG ORDERING OF THE Ga- AND In-SUBLATTICES, AND THAT DEGREE OF ORDERING IS CONTROLLED BY GROWTH PARAMETERS. STRONG ORDERING SHOULD LEAD TO THE LA ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. Microchannel Plate Imaging Neutron Detector

    SBC: NOVA SCIENTIFIC INCORPORATED            Topic: N/A

    One highly desired improvement for neutron sensing is an imaging neutron detector with high two-dimensional spatial resolution and a large detector area. At present, achievable real-time neutron imaging detector resolution is only about 1 mm. The innovation proposed is to adapt for neutron imaging the high spatial resolution Microchannel Plate (MCP) detector technology so widely used for detecting ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government