Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Embedded Sensors via Laser Engineered Net Shaping

    SBC: OPTOMEC, INC.            Topic: N/A

    Optomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  6. Thin-film Nonlinear Optical Material: Ordered Ga(1-x)In(x)P On GaAs

    SBC: Spire Corporation            Topic: N/A

    GROWTH OF OEDERED Ga(1-x)In(x)P ON GaAs, AS A THIN FILM MATERIAL SHOWING VERY STRONG NONLINEAR OPTICAL (nlo) EFFECTS, WILL BE ACCOMPLISHED BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). IT IS WELL KNOWN THAT MOCVD-GROWN Ga(1-x)In(x)P DISPLAYS VERY STRONG ORDERING OF THE Ga- AND In-SUBLATTICES, AND THAT DEGREE OF ORDERING IS CONTROLLED BY GROWTH PARAMETERS. STRONG ORDERING SHOULD LEAD TO THE LA ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. Microchannel Plate Imaging Neutron Detector

    SBC: NOVA SCIENTIFIC INCORPORATED            Topic: N/A

    One highly desired improvement for neutron sensing is an imaging neutron detector with high two-dimensional spatial resolution and a large detector area. At present, achievable real-time neutron imaging detector resolution is only about 1 mm. The innovation proposed is to adapt for neutron imaging the high spatial resolution Microchannel Plate (MCP) detector technology so widely used for detecting ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  8. Tunable Diode Laser

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  9. MOCVD Growth of Epitaxial GaN on Lattice-Matched Substrates

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    The III-V nitride semiconductor family affords many unique properties which make these materials attractive candidates for producing electronic and optoelectronic devices. Much progress has been made in epitaxial thin film growth of nitrides using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) during the last decade. These efforts are hindered by the lack of lattic ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  10. A Compact, Solid State UV Laser

    SBC: CORETEK, INC.            Topic: N/A

    A compact, high power pulse UV laser would find many immediate applications in a variety of fields including bio-sensing. high-density data storage, printing, photolithography, remote sensing and detection of explosive materials. In response to this need, CoreTek, Inc. proposes to develop and commercialize a compact, diode-pumped, micro-cavity UV laser to generate an optical pulse train of sub-nan ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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