Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Embedded Sensors via Laser Engineered Net Shaping

    SBC: OPTOMEC, INC.            Topic: N/A

    Optomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  6. Non-Cryocooled Dual-Band Infrared Imager

    SBC: EMPIRICAL TECHNOLOGIES CORPORATION            Topic: N/A

    SDI requires dual band imaging technology. The approach may provide equivalent performance at far lower cost than discrete element IRFPA technologies. The project will develop a dual band IR imager using its photodichronic imaging (PDI) technology. A sensitive 8 to 12 micron imager has been demonstrated. Similarly designed materials have been demonstrated to be sensitive to different IR spectral b ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  7. Solid-State Spray Forming of Near-Net-Shape Structural Materials

    SBC: INNOVATIVE TECHNOLOGY INC            Topic: N/A

    The objective of this research is to demonstrate the feasibility of spray forming aluminum Metal Matrix Composites (MMC) in the solid-state physical form as a light weight structural material. It is anticipated that this innovative manufacturing process will provide opportunities to fabricate near-net-shape spacecraft and interceptor structures with unique material properties. The process called S ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. CROSSED-FIELD WIGGLER

    SBC: MISSION RESEARCH CORP.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  9. High Voltage Liquid Dielectric Repetitive Opening Switch

    SBC: Tetra Corporation            Topic: N/A

    This program is to develop repetitive opening switches capable of switching average currents of kiloamps at voltages of hundreds of kV to MV's using a new class of liquid dielectrics. This family of liquids has very high drift velocity and low conduction losses for electrons within a particular energy band. The liquid is not subjected to ionization, it simply acts as a conductor of electricity or ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  10. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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