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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Catalytic Conversion Recycling Process for Composite Aircraft Components

    SBC: Adherent Technologies, Inc.            Topic: N/A

    Cured aircraft composite materials present a particularly difficult challenge for recycling technology. Those materials have mostly thermosetting epoxy matrices and occur in intimate association with metals, paints, and coatings. Current techniques for recycling thermoset composites, mostly for automotive sheet molding compounds (SMC), involve pulverizing the material for use as fillers. Th ...

    SBIR Phase II 1998 Department of DefenseNavy
  2. Catalytic Conversion Recycling Process for Composite Aircraft Components

    SBC: Adherent Technologies, Inc.            Topic: N/A

    Cured aircraft composite materials present a particularly difficult challenge for recycling technology. Those materials have mostly thermosetting epoxy matrices and occur in intimate association with metals, paints, and coatings. Current techniques for recycling thermoset composites, mostly for automotive sheet molding compounds (SMC), involve pulverizing the material for use as fillers. Th ...

    SBIR Phase I 1996 Department of DefenseNavy
  3. Tertiary Recycling Process for Shipboard Plastic Processor Product

    SBC: Adherent Technologies, Inc.            Topic: N/A

    A novel tertiary recycling process is proposed for investigation as an economical means for recycling shipboard plastic waste. Early development work has shown that this process can convert a wide variety of polymers and composites into low molecular weight hydrocarbons at temperatures below 200'C. The hydrocarbons produced can then be reused as chemicals, fuels, or monomers. Metal, glass, and fil ...

    SBIR Phase I 1996 Department of DefenseNavy
  4. High Mobility Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE HIGH TEMPERATURE STRENGTH OF CERAMIC MATERIALS MAKE THEM ATTRACTIVE FOR USE IN HIGH EFFICIENCY COMBUSTION ENGINES. UNFORTUNATELY, THE POOR FRICTION AND WEAR PROPERTIES OF COMMON CERAMICS OFTEN PRECLUDE THEIR USE IN ROTATING AND SLIDING COMPONENTS. SOLID STATE LUBRICANTS ARE A POTENTIAL SOLUTION TO THIS TRIBOLOGICAL PROBLEM BUT THEY ARE USUALLY INCOMPATIBLE WITH OXIDE-BASED CERAMICS. A TITANIUM ...

    SBIR Phase II 1994 Department of DefenseArmy
  5. Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  6. Arsine Abatement

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continued use of arsine gas and/or its derivatives is vital to the manufacture of a wide variety of semiconductor devices. While the use of arsine is growing, it poses serious environmental and safety problems in the industry. New methods must be found that permit the facile trapping and detoxification of arsine and its derivatives. Advanced Technology Materials, Inc. (ATM) has gained a reputa ...

    SBIR Phase II 1996 Department of DefenseAir Force
  7. Cubic Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide promises near-term insertion in high power, high temperature, applications. The wide band-gap and consequent high breakdown field of silicon carbide theoretically allows efficient high power solid state power amplifiers. Its high thermal conductivity will permit compact devices and high power density. To date, virtually all silicon carbide-based devices have been fabricated using 6 ...

    SBIR Phase II 1994 Department of DefenseAir Force
  8. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  9. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. HIGH POWER MOS TRANSISTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
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