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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Arsine Abatement

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continued use of arsine gas and/or its derivatives is vital to the manufacture of a wide variety of semiconductor devices. While the use of arsine is growing, it poses serious environmental and safety problems in the industry. New methods must be found that permit the facile trapping and detoxification of arsine and its derivatives. Advanced Technology Materials, Inc. (ATM) has gained a reputa ...

    SBIR Phase II 1996 Department of DefenseAir Force
  2. Cubic Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide promises near-term insertion in high power, high temperature, applications. The wide band-gap and consequent high breakdown field of silicon carbide theoretically allows efficient high power solid state power amplifiers. Its high thermal conductivity will permit compact devices and high power density. To date, virtually all silicon carbide-based devices have been fabricated using 6 ...

    SBIR Phase II 1994 Department of DefenseAir Force
  3. High Performance Thin Film Microactuator Materials

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modificatio ...

    SBIR Phase II 1996 Department of DefenseAir Force
  4. Stress Analyzer for Microelectronic Devices

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Multilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a li ...

    SBIR Phase II 1996 Department of DefenseAir Force
  5. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase I 1996 Department of DefenseAir Force
  6. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase II 1998 Department of DefenseAir Force
  7. High Temperature III-V Nitride RF Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

    SBIR Phase II 1998 Department of DefenseAir Force
  8. HIGH TEMPERATURE INTEGRATED CAPACITORS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...

    SBIR Phase I 1998 Department of DefenseAir Force
  9. LOW DEFECT DENSITY GaN PHOTODIODE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    GaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, current GaN photodiodes have much larger dark currents than expected. This Phase I program seeks to dramatically improve the current state of GaN photodiodes by employing low dislocation density epitaxia ...

    SBIR Phase I 1998 Department of DefenseAir Force
  10. Novel SiC MOSFET Technology

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseAir Force

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