You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Catalytic Conversion Recycling Process for Composite Aircraft Components

    SBC: Adherent Technologies, Inc.            Topic: N/A

    Cured aircraft composite materials present a particularly difficult challenge for recycling technology. Those materials have mostly thermosetting epoxy matrices and occur in intimate association with metals, paints, and coatings. Current techniques for recycling thermoset composites, mostly for automotive sheet molding compounds (SMC), involve pulverizing the material for use as fillers. Th ...

    SBIR Phase II 1998 Department of DefenseNavy
  2. Catalytic Conversion Recycling Process for Composite Aircraft Components

    SBC: Adherent Technologies, Inc.            Topic: N/A

    Cured aircraft composite materials present a particularly difficult challenge for recycling technology. Those materials have mostly thermosetting epoxy matrices and occur in intimate association with metals, paints, and coatings. Current techniques for recycling thermoset composites, mostly for automotive sheet molding compounds (SMC), involve pulverizing the material for use as fillers. Th ...

    SBIR Phase I 1996 Department of DefenseNavy
  3. Tertiary Recycling Process for Shipboard Plastic Processor Product

    SBC: Adherent Technologies, Inc.            Topic: N/A

    A novel tertiary recycling process is proposed for investigation as an economical means for recycling shipboard plastic waste. Early development work has shown that this process can convert a wide variety of polymers and composites into low molecular weight hydrocarbons at temperatures below 200'C. The hydrocarbons produced can then be reused as chemicals, fuels, or monomers. Metal, glass, and fil ...

    SBIR Phase I 1996 Department of DefenseNavy
  4. Arsine Abatement

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continued use of arsine gas and/or its derivatives is vital to the manufacture of a wide variety of semiconductor devices. While the use of arsine is growing, it poses serious environmental and safety problems in the industry. New methods must be found that permit the facile trapping and detoxification of arsine and its derivatives. Advanced Technology Materials, Inc. (ATM) has gained a reputa ...

    SBIR Phase II 1996 Department of DefenseAir Force
  5. Cubic Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide promises near-term insertion in high power, high temperature, applications. The wide band-gap and consequent high breakdown field of silicon carbide theoretically allows efficient high power solid state power amplifiers. Its high thermal conductivity will permit compact devices and high power density. To date, virtually all silicon carbide-based devices have been fabricated using 6 ...

    SBIR Phase II 1994 Department of DefenseAir Force
  6. High Performance Thin Film Microactuator Materials

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modificatio ...

    SBIR Phase II 1996 Department of DefenseAir Force
  7. Stress Analyzer for Microelectronic Devices

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Multilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a li ...

    SBIR Phase II 1996 Department of DefenseAir Force
  8. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase I 1996 Department of DefenseAir Force
  9. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase II 1998 Department of DefenseAir Force
  10. High Temperature III-V Nitride RF Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

    SBIR Phase II 1998 Department of DefenseAir Force
US Flag An Official Website of the United States Government