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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. PULSE DETONATION SYNTHESIS FOR HIGH TEMPERATURE CERAMIC COMPOSITES AND COATINGS

    SBC: Adroit Systems, Inc.            Topic: N/A

    Adroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. Functional Gradient Materials

    SBC: Sensintel Inc.            Topic: N/A

    Functional gradient materials (FGMs) have a microstructurally graded transition in composition (e.g. zirconia to a nickel based superalloy). The graded transition eliminates problems associated with a discrete interface such as poor mechanical strength and transport losses. They are being actively pursued by the engineering community, particularly in Japan, as a means of taking advantage of two di ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  3. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. High Power Frequency Doubled Laser Diode Devices

    SBC: Altos, Inc.            Topic: N/A

    This Small Business Innovation Research Phase I program will determine the practicality of increasing the second harmonic (SH) output of frequency doubling devices by at least 5 times current gutput powers. Altos has demonstrated in preliminary experiments have a 2 times to 3 times increase in SH output by creating thermal gradients across the waveguide structures used to frequency double the lase ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. MULTI LEVEL SECURE IMAGE OPERATING SYSTEM

    SBC: ARIES Technology Corporation            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. High Quantum Efficiency, Low-noise, Radiation-tolerant AlGaP CCD-UV

    SBC: ASTROPOWER, INC.            Topic: N/A

    ASTROPOWER PROPOSES TO DEVELOP A NEW FRONT-ILLUMINATED, ALUMINUM GALLIUM PHOSPHIDE (AlGaP) BASED, CHARGE-COUPLED DEVICE (CCD), ULTRAVIOLET (UV) IMAGING ARRAY. THIS NOVEL ARRAY TECHNOLOGY HAS NEVER BEEN SUCCESSFULLY DEVELOPED. THREE NEW INNOVATIONS WILL BE NECESSARY TO ACOMPLISH THE AlGaP CCD. THESE ARE: AlGaP MATERIAL QUALITY WHICH CAN SUPPORT A CCD DEVICE; THE GROWTH OF A NATIVE OXIDE ON THE AlGa ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. High-Performance, Resonant Optical Cavity Light-Emitting Diodes

    SBC: ASTROPOWER, INC.            Topic: N/A

    The Phase I Project will develop a comprehensive model to evaluate and optimize state-of-the-art light-emitting diodes for optical memories, optical computing, and fiber or free-space photonic interconnects. The innovation is the development of resonant optical cavity LEDs and a proprietary low-cost epitaxy technology for their fabrication. A unified approach to the design of LEDs with resonant op ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  8. High Voltage GaAs Solar Cell for Linear Concentrator Arrays

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower proposes to develop a new high voltage solar cell for photovoltaic linear concentrator arrays based on our thin GaAs solar cell and epitaxial lateral overgrowth technologies and applying lateral segment interconnection techniques. This solar cell design has several advantages which make it ideal for space concentrator systems. These are high system voltage (10 to 500 volts per cell), re ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  9. Low-Defect GaN Surrogate Substrates by Epitaxial Lateral Overgrowth

    SBC: ASTROPOWER, INC.            Topic: N/A

    We propose exploratory development of new epitaxial growth technologies for low-defect GiN epitaxial structures and surrogate substrates. A significant feature of our approach is epitaxial latval overgrowth for "defect filtering." We present arguments that such epitaxial lateral overgrowth will lead to GaN material of unprecedented quality with respect to defects, stress, and purity. In the Phase ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. High Efficiency Floating Junction Gallium Arsenide Solar Cell

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
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