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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. High Effectiveness Regenerators for Very Low Temperature Cryocooler

    SBC: General Pneumatics Corporation            Topic: N/A

    REGENERATORS THERMOFLUID CRYOREFRIGERATORS THE NEW TYPE OF REGENERATORS PROPOSED OFFERS FOR 10 K CRYOCOOLERS THE PROSPECT OF REDUCTIONS OF 100'S OF WATTS OF POWER AND KILOGRAMS OF WEIGHT PER WATT OF REFRIGERATION, AND EXTENSION OF OPERATING LIFE BY 10,000'S OF HOURS. PHASE 1 WILL DEFINE THE MODELING, THERMOFLUID PERFORMANCE TRADE-OFFS, MATERIAL PROPERTIES, PRODUCTION AND TEST METHODS. THESE REGENE ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. Photrefractive Polymer-Based Holographic Data Storage

    SBC: SIGMA TECHNOLOGIES INTERNATIONAL GROUP, INC.            Topic: N/A

    Photorefractive materials promise to enable dynamic holography and erasable high density data storage for future information technologies. This project will develop and demonstrate a holographic data storage technology using novel photorefractive polymers with electro-optic (EO) coefficients and bandwidths that are significantly superior than LiNbO3. An important advantage of these polymers is tha ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  7. Functional Gradient Materials

    SBC: Sensintel Inc.            Topic: N/A

    Functional gradient materials (FGMs) have a microstructurally graded transition in composition (e.g. zirconia to a nickel based superalloy). The graded transition eliminates problems associated with a discrete interface such as poor mechanical strength and transport losses. They are being actively pursued by the engineering community, particularly in Japan, as a means of taking advantage of two di ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  8. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. MULTI LEVEL SECURE IMAGE OPERATING SYSTEM

    SBC: ARIES Technology Corporation            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. Nonequilibrium Electron Transport in InP Based Hybrid Heterojunction

    SBC: EPITRONICS CORP.            Topic: N/A

    InP based heterojunction bipolar transistors (HBTs) exhibit proven potential for use in high performance digital integrated circuits and discrete microwave components. For high speed applications, it is desirable to utilize structures that have been designed to promote high levels of nonequilibrium electron transport as this allows realization of higher electron velocities than possible for diffus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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