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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. PULSE DETONATION SYNTHESIS FOR HIGH TEMPERATURE CERAMIC COMPOSITES AND COATINGS

    SBC: Adroit Systems, Inc.            Topic: N/A

    Adroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. Functional Gradient Materials

    SBC: Sensintel Inc.            Topic: N/A

    Functional gradient materials (FGMs) have a microstructurally graded transition in composition (e.g. zirconia to a nickel based superalloy). The graded transition eliminates problems associated with a discrete interface such as poor mechanical strength and transport losses. They are being actively pursued by the engineering community, particularly in Japan, as a means of taking advantage of two di ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  3. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. 3D IMAGING OF OPAQUE OBJECTS BY USING PHASE RETRIEVAL

    SBC: ADVANCED MODULAR POWER SYSTEMS            Topic: N/A

    As an alternative to holographic laser radar, AMPS will develop a 3-D imaging concept that collects far-field intensity speckle patterns. This kind of measurement greatly relaxes the tolerances on vibration and coherence length. However, phase retrieval will be required to retrieve a 3-D image. Phase retrieval algorithms typically utilize some type of prior knowledge about the object. In industria ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  5. Material Growth and Bandgap Engineering of DMS Crystals and Q-Switching and Isolation of Near/Mid IR Lasers

    SBC: American Research Corporation of Virginia            Topic: N/A

    Development of reliable (Q-) switching and isolation materials is being sought for near-to-mid infrared lasers for safety, extended life and fiber optic communication. The voltage or E-field controlled (Q-) switching materials such as Pockels cells and liquid Kerr cells are not reliable for long term operation in tactica applications due to crystal surface (e.g., KDP, ADP) degradation by moisture ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  6. GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

    SBC: Apa Optics, Inc.            Topic: N/A

    Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material sys ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  7. GaN/AlN Based High Voltage Heterostructure Transistor

    SBC: Apa Optics, Inc.            Topic: N/A

    High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs or Si based high voltage device are limited by a relatively low intrinsic breakdown voltage and,therefore, inherently suited for high power applications. We propose to develop novel high voltage hete ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  8. Multicolor UV Seeker Based on GaN/GaAs Heterostructures

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  9. Single Cell Carbide Fueled Thermionic Fuel Element

    SBC: Applied Sciences Inc.            Topic: N/A

    If you can't beat them, join them. Such is the philosophy of Space Exploration Associates, who hired the top talent in Russian and the new Republic of Georgia to develop advanced thermionic converters for SDIO. Unlike other highly publicized exchanged with the Russians, this work will be done in the US and no hardware will cross international lines. The metallurgical wizards from the East have con ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  10. Joining Carbon Composite Fins to Titanium Heat Pipes

    SBC: Applied Sciences Inc.            Topic: N/A

    Everybody knows that composites have high strength, low density, and great thermal properties. They would be great for a number of applications such as fins for spacecraft radiators. So why aren't they used more on spacecraft thermal systems? One reason is joining technology. Although many methods such as brazing and adhesives have been developed for joining composites to metals, these methods are ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
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