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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. PULSE DETONATION SYNTHESIS FOR HIGH TEMPERATURE CERAMIC COMPOSITES AND COATINGS

    SBC: Adroit Systems, Inc.            Topic: N/A

    Adroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Material Growth and Bandgap Engineering of DMS Crystals and Q-Switching and Isolation of Near/Mid IR Lasers

    SBC: American Research Corporation of Virginia            Topic: N/A

    Development of reliable (Q-) switching and isolation materials is being sought for near-to-mid infrared lasers for safety, extended life and fiber optic communication. The voltage or E-field controlled (Q-) switching materials such as Pockels cells and liquid Kerr cells are not reliable for long term operation in tactica applications due to crystal surface (e.g., KDP, ADP) degradation by moisture ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  4. GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

    SBC: Apa Optics, Inc.            Topic: N/A

    Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material sys ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  5. GaN/AlN Based High Voltage Heterostructure Transistor

    SBC: Apa Optics, Inc.            Topic: N/A

    High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs or Si based high voltage device are limited by a relatively low intrinsic breakdown voltage and,therefore, inherently suited for high power applications. We propose to develop novel high voltage hete ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  6. Multicolor UV Seeker Based on GaN/GaAs Heterostructures

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. Grid System Matrix for EMP Transient Protection

    SBC: APPLIED CONCEPT RESEARCH, INC.            Topic: N/A

    NEMP (Nuclear Electro-Magnetic Pulse), lightning strikes, high powered EMI (Electro-Magnetic Induction), or ESD (Electro-Static Discharge) can impress high transient voltages on wires connecting to electronic modules. These transients are potentially destructive to aircraft electronic components and can result in system failures. To eliminate or substantially reduce the effects of transients on ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  8. Single Cell Carbide Fueled Thermionic Fuel Element

    SBC: Applied Sciences Inc.            Topic: N/A

    If you can't beat them, join them. Such is the philosophy of Space Exploration Associates, who hired the top talent in Russian and the new Republic of Georgia to develop advanced thermionic converters for SDIO. Unlike other highly publicized exchanged with the Russians, this work will be done in the US and no hardware will cross international lines. The metallurgical wizards from the East have con ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  9. Joining Carbon Composite Fins to Titanium Heat Pipes

    SBC: Applied Sciences Inc.            Topic: N/A

    Everybody knows that composites have high strength, low density, and great thermal properties. They would be great for a number of applications such as fins for spacecraft radiators. So why aren't they used more on spacecraft thermal systems? One reason is joining technology. Although many methods such as brazing and adhesives have been developed for joining composites to metals, these methods are ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  10. Solid State Neutron Detector

    SBC: Applied Sciences Inc.            Topic: N/A

    Phase I proposes to demonstrate an easy-to-operate, inexpensive room temperature neutron detector based on boron-doped diamond. The detector would produce an immediate signal related to low-level neutron irradiation. The concept exploits the high neutron absorption cross section of B-10, which results in excellent sensitivity. The charge carriers generated in the diamond by a neutron absorption ev ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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