Award Data

Adroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...

This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

Development of reliable (Q-) switching and isolation materials is being sought for near-to-mid infrared lasers for safety, extended life and fiber optic communication. The voltage or E-field controlled (Q-) switching materials such as Pockels cells and liquid Kerr cells are not reliable for long term operation in tactica applications due to crystal surface (e.g., KDP, ADP) degradation by moisture ...

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An adaptive attitude control system for a space-based interceptor will ameliorate the effects of torque disturbances when firing a divert thruster with the line of force offset from its center of mass. The adaptive control algorithm is based on a simplified version of a model reference adaptive control concept. It possesses two features: (i) more robust performance for the interceptor guidance and ...

The military has a need for high power/high frequency electronics which can operate at high temperatures for applications such as radar and electronic warfare systems. While Si and GaAs are already being used near their limits of output power and operating temperature, the potential of SiC is just beginning to be realized. High frequency 4H-SiC MESFETs with an f(max) as high as 12.9 GHz, and RF ou ...

The rapid development of the technology for producing high quality single crystal SiC wafers and thin films presents the opportunity to fabricate solid-state devices with power-temperature capability far greater than devices currently available. While conventional silicon power devices are already being used near their limits of operating temperature and power, the potential of SiC is just beginni ...

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