Award Data

SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...

TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...

The superior optical properties of BBO and its applicability in frequency doublers and waveguides justifies development of thin film deposition processes which can be integrated with microelectronic processing. The high damage threshold of BBO, a necessary component for device integrity, is a major advantage over other nonlinear optic materials. In Phase I, chemical precursors and a deposition pro ...

We propose to demonstrate the feasibility of solar-blind, multi-spectral III-V nitride UV detectors which can meet the requirements of applications in both the military and commercial sectors (missile threat warning, UV search and track, environmental monitoring in gas turbines, and general flame detection). A novel aspect of our approach is the use of SiC as a substrate for these devices, which w ...

Phase I will develop a gas-phase process for the deposition of low dielectric constant polymers for use in integrated circuits. This process will utilize the firm's liquid delivery technology to deliver the reactants and grow films at high deposition rates. Polymerization will be induced by thermal activation on a heated substrate. This novel approach to polymeric film growth enables the depositio ...

Radiation hardened ferroelectric random access memory (FRAM) devices have potential uses in numerous military applications. Until recently, FRAMs have relied on lead zirconate titanate (PZT) as the storage material. However, a new class of materials promises to offer higher device reliability and easier integration into existing technologies. SrBi2Ta209 has been identified as a material of choice ...

The III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operati ...

Large power handling systems of 1KW to 150KW are required in a many applications ranging from aerospace to consumer electronics to industrial power systems and transportation. Conventional electronic systems, based on silicon or gallium arsenide devices, require a large number of devices enhanced with extra heat sinking and sophisticated control systems to ensure synchronous operation. The extra ...

Virtual displays have tremendous potential in defense applications such as virtual reality training, battlefield support, and information systems. Full color displays require red, blue, and green LED arrays of which only red is commercially available. This program teams ATMI, a recognized leader in the GaN growth community, with Reflection Technology, a leader in virtual display technology. ATMI w ...

Increasing thermal and power loads in circuitry demand electrical components which can operate at temperatures up to 400 C and beyond . A combination of high bandgap semiconductors and improved dielectrics is needed to solve this problem. ATMI has maj or programs in production of both SiC/GaN semiconductor materials and high dielectric constant complex oxide thin films, in particular barium stront ...