You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Target Recognition Using Associative Parallel Processors

    SBC: ATLANTIC AEROSPACE ELECTRONICS CORP.            Topic: N/A

    SDIO HAS THE DIFFICULT PROBLEM OF FINDING TARGETS IN CLUTTER WITH PRACTICALLY NO TOLERANCE FOR ERROR BECAUSE OF THE AUTOMATED NATURE OF RESPONSE AND THE SHORT TIMES INVOLVED. TARGET RECOGNITION IN CLUTTER REQUIRES HIGH SPEED COMPUTATION AND THE OPTIMUM USE OF PARALLEL PROCESSING TO PRODUCE RESULTS IN A TIMELY WAY. ATLANTIC AEROSPACE HAS DEVELOPED ON-LINEAR ALGORITHMS BASED ON GRAY SCALE MORPHOLOGI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  2. Infrared Detectors Using Mercury Manganese Telluride

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    In the proposed research we will investigate methods for improving the performance of very long wavelength infrared (VLWIR) photovoltaic detectors fabricated from Hg1-xMnxTe. This material was chosen because Hg1-xMnxTe has been shown to have superior mechanical, chemical and thermal stability compared Hg1-xCdxTe. During previously SBIR-BMDO funded work, Brimrose Corporation successfully fabricate ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  3. InP Solar Cell on Porous Silicon for Improved Solar Energy Conversion

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Brimrose Corporation has developed a novel low-temperature and low energy ion-beam assisted growth process for minimizing the problems and improving the quality of the hetero epitaxial films of III-V compound semiconductors on foreign substrates such as silicon, germanium, etc. The improvement in the quality of hetero epitaxial InP/Si films will be achieved by using this novel low temperature grow ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  4. AlxGa(1-x)N Solar Blind Detector Material Device Structure Growth & Evaluation

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Phase I technical objectives of Brimrose Corporation are two fold. They are: 1) Epitaxial growth of AlxGa1-xN solar blind detector material device structure on new lattice and thermal matched substrates and evaluation of the material properties. The film growth will be carried out in Brimrose Corporation's 'Novel' ECR MOMBE Reactor using rare earth permanent magnets; 2) Preliminary epitaxial growt ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. Novel Photorefractive Time-Integrating Detector for the Radar Signal Processing

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Using newly developed II-VI photorefractive semiconductors as time integrator and high performance TeO2 acousto optic deflectors (AODs), Brimrose proposes to develop a compact RF signal processor useful in radar signal processing. The high sensitivity of this relatively new photorefractives, in the wavelength range of 0.63ym to 1.6,um, will allow signal processing using low power near infrared las ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Optical Power Limiters

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Powder Synthesis and Bulk Crystal Growth of Gallium Nitride

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting technique. Since GaN demonstrates peritectic-type decomposition at atmospheric pressure, the entire sku ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Neural Geometric Engine Using Cortical Information Processing

    SBC: COMPUSENSOR TECHNOLOGY CORP.            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government