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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. DIRECTED ENERGY SYSTEM POINTING THROUGH GEOSYNCRONOUS POSITIONING SATELLITE INTERFEROMETRY

    SBC: Adroit Systems, Inc.            Topic: N/A

    CURRENT STUDIES CONCENTRATE ON GLOBAL POSITIONING SYSTEM (GPS) AS A SPACECRAFT ATTITUDE DETERMINATION TOOL. TWO GPS ANTENNAS RECEIVING THE SAME SIGNAL CAN COMPARE THEIR RELATIVE PHASES TO DETERMINE THE ANGLE BETWEEN THE TWO ANTENNAS AND THE GPS SATELLITE. BY COMPUTING THE ANGLE TO THREE OR MORE SATELLITES, THE COMPLETE INERTIAL ORIENTATION MAY BE DETERMINED. APPLYING ADVANCES IN GPS INTERFEROMETRY ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  2. SYNTHESIS OF ULTRAHIGH PURITY SUBMICRON BORON CARBIDE POWDERS

    SBC: ADVANCED REFRACTORY TECHNOLOGIES, INC.            Topic: N/A

    MATERIALS FOR SPACECRAFT STRUCTURES ARE REQUIRED WHICH POSSESS HIGH STIFFNESS TO WEIGHT RATIOS, ALONG WITH CHEMICAL AND DIMENSIONAL STABILITY IN SPACE ENVIRONMENTS. B(4)C HAS ONE OF THE HIGHEST RATIOS AND CAN BE FABRICATED INTO DENSE BODIES. OPTIMAL COMPOMENT PERFORMANCE WILL LIKELY REQUIRED AN IMPROVED B(4)C POWDER WHICH IS NOT AVAILABLE COMMERCIALLY NOW. A PROPRIETARY HIGH TEMPERATURE REACTOR HA ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  3. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Si-CeO2 Silicon-On-Insulator Device Structure Grown by Laser Assisted Molecular Beam Deposition

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Pulsed Arc Molecular Beam Film and Powder Production System

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. LASER ALLOYING OF PLASMA-DEPOSITED COATINGS FOR PROTECTION AGAINST ATOMIC OXYGEN

    SBC: American Research Corporation of Virginia            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  7. Submicron-Resolution, Large-Area, High-Throughput Patterning System for Electronic Modules

    SBC: Anvik Corporation            Topic: N/A

    This proposal presents a program for developing a novel patterning system technology that not only delivers submicron resolution over a large image field, but also produces high exposure throughput and eliminates the shortcomings of conventional systems. The new technology is highly attractive in the fabrication of semiconductor integrated circuits and flat-panel displays. Phase I will design a sy ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  8. Submicron-Resolution, Large-Area, High-Throughput Patterning System for Electronic Modules

    SBC: Anvik Corporation            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  9. RISK-BASED ANALYSIS OF TECHNICAL SPECIFICATIONS

    SBC: Applied Biomathematics Inc            Topic: N/A

    THE FRANTIC COMPUTER CODE IS THE MOST ADVANCED MODEL FOR ADDRESSING TIME-DEPENDENT RISK EFFECTS ASSOCIATED WITH TECHNICAL SPECIFICATIONS. IT IS USED BY THE INDUSTRY FOR THE EVALUATION OF UPGRADES AND/OR IMPROVEMENTS IN EXISTING TECHNICAL SPECIFICATIONS AND BY THE NRC STAFF IN RESPONDING TO THE LICENSEE SUBMITTALS. THE EXISTING METHODOLOGY HAS TWO MAJOR DEFICIENCIES: IT DOES NOT PROVIDE THE BOUNDIN ...

    SBIR Phase II 1988 Nuclear Regulatory Commission
  10. MULTI LEVEL SECURE IMAGE OPERATING SYSTEM

    SBC: ARIES Technology Corporation            Topic: N/A

    This proposed study will accomplish the following: Investigate methods for allocating image resources in MLS operating systems. Investigate methods for controlling image processes from MLS (OS). Develop algorithms for efficient image management in MLS OSs. Develop algorithms for efficient image processing security in MLS OSs. Provide a framework for automatic downgrading of images using a MLS OS. ...

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
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