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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Ion-Implanted 2-D MESFET Technology for Wireless Communications
SBC: Advanced Device Technologies, Topic: N/AThis Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Nuclear Weapons Effects Phenomenology
SBC: Applied Physics Technologies Topic: N/AThe nuclear weapons community has traditionally focused on the next generation or level of weapon capability complimented by gathering and analysis of actual test data. Now, with the cessation of actual weapons testing, there is an increased need to use the actual test data in modeling techniques to better understand the phenomenology and potential effects of nuclear weapons. The first phase of ...
SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency -
Laser Turbulence Measurements in the LB/TS
SBC: Applied Research Associates, Inc. Topic: N/ATurbulence of gas flows by its very nature is one of the most difficult things to model and measure. We propose to develop a new way of measuring the turbulence and to compare these measurements to predictions using the k-epsilon model. Typical measurements, in the past, use smoke, Schlierin or shadow graph techniques to visually infer turbulence characteristics. These features are either motio ...
SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency -
Infrared Photo Transistor Based on Inter-Valence Sub-Band Transition
SBC: C & W Microfab, Inc. Topic: N/AA novel quantum well infrared photo transistor, which we call QWIPT, is proposed. By taking the advantage of the almost perfect alignment of the conduction band in GaAsSb/InAlAs system, it is possible to integrate such quantum wells into a QWIPT to improve the optical gain and, therefore, the detectivity of the p-QWIP. We expect, by incorporating molecular beam epitaxy growth interruption scheme, ...
SBIR Phase I 1995 Department of DefenseMissile Defense Agency -
Comprehensible Descriptions for Fast Processing of Image Data
SBC: DATAMAT SYSTEMS RESEARCH, INC. Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Ionic Self Assembled Monolayer (ISAM) Processes for Electronic Materials and Devices
SBC: LUNA INNOVATIONS INCORPORATED Topic: N/ANovel ionic self-assembled monolayer (ISAM) processes for the fabrication of advanced electronic materials and devices will be developed through this program. Revolutionary ISAM methods to create nanostructured multi-layer inorganic/organic thin-films offer major advantages over conventional manufacturing processes, since the process is simple, low-cost and environmentally friendly in that no vola ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Protective Coatings for Optical System Components Fabricated Using Ionic Self Assembled Monolayer (ISAM) Processes
SBC: LUNA INNOVATIONS INCORPORATED Topic: N/AF&S and Virginia Tech will cooperatively develop high performance protective ionic self-assembled monolayer (ISAM) organic/inorganic coatings for space-based optical and structural components, and work with Litton to upscale practical coating manufacturing. Revolutionary ISAM methods of creating multi-layer protective nanopartwcle films offer major advantages over con-ventional coating processes, ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Si Wires in Silicon-On-Insulator Configuration
SBC: GRATINGS INCORPORATED Topic: N/AWe propose a systematic investigation of crystalline Si structures as their dimensions are reduced to quantum sizes (5-10 nm). For convenience, we have chosen Si on insulator (SOI) material for optical and electrical characterization. Our nanofabrication approach relies on simple laser interferometric lithography techniques that are uniquely adaptable to large area manufacturing. Suitable applic ...
SBIR Phase I 1995 Department of DefenseMissile Defense Agency -
Development of a Differential Interferometric Technique for Measuring Magnetic Field Profiles in a Plasma Radiation Source
SBC: HY-Tech Research Corp. Topic: N/AThe current distribution in plasma radiation sources is both a yardstick for measuring the coupling efficiency of the generator, and a means of studying the implosion dynamics of the load. Since the current distribution cannot be directly measured, it must be deduced from the magnetic field profile. Magnetic field distributions, based on the Faraday rotation of polarized laser light, are typical ...
SBIR Phase I 1995 Department of DefenseDefense Threat Reduction Agency -
Development of a Performance Assessment Process Controller
SBC: Innovative Tech. Solutions Topic: N/AN/A
SBIR Phase I 1995 Nuclear Regulatory Commission