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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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White Light from GaN/Conjugated Polymer Hybrid LEDs
SBC: UNIAX Corporation Topic: N/AThis Phase I SBIR Proposal outlines a program directed toward the development of highly efficient white light sources or multiple color sources by combining the photoluminescence from semiconducting conjugated polymers with the emission from high efficiency Group III-Nitride based LEDs; the Group III-Nitride LED provides the blue component of the emission spectrum and, simultaneously, serves as th ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Voice over IP Security Architecture (VISA)
SBC: AVENDA SYSTEMS Topic: MDA07042Avenda Systems proposes a voice over IP security architecture and solution called VoIP Inter-domain Security Architecture (VISA). VISA system will provide the architectural foundations to secure voice traffic within a security domain (intra-domain) and across a security domain (inter-domain). This is currently a feature gap in enterprise VOIP solutions. Avenda Systems has the expertise to develop ...
SBIR Phase I 2008 Department of DefenseMissile Defense Agency -
Visible CMOS Imager with Ultra High Dynamic Range
SBC: Photobit Corporation Topic: N/AThe recent development of the CMOS active pixel sensor (APS) by the proposers during their former employment at NASA's Jet Propulsion Laboratory has, for the first time, permitted large scale integration of supporting circuitry and smart camera functions on the same chip as a high performance image sensor. One of the major challenges facing any image sensor is the ability to handle scenes with wi ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Very Low Cost Custom Radiation Hard CMOS Integrated Circuit Manufacturing Process
SBC: Tanner Research, Inc. Topic: N/AWe propose to develop a method to manufacture high-performance, low-cost, radiation hard digital integrated circuits (IC) on-demand in small and medium volumes. Our manufacturing approach integrates a unique micromachining etch process with the best cost, performance, and rapid-reaction features of modern gate array and shared mask fabrication technologies. In addition, the power dissipated by ICs ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Ultraspectral Imager
SBC: KESTREL CORP Topic: N/AThis Phase I SBIR demonstrates the underlying technology required to construct an ultraspectral imager that has the ability to spectrally resolve molecular absorption lines while simultaneously creating a two dimensional spatial mapping. The proposed instrument will have a spectral resolution that is better than 2 cm-1 and two dimensional spatial resolution that exceeds 2 milliradian. Based on Fou ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Ultra Low Phase Noise GaAs MOSFETs
SBC: Witech (widegap Technology, Topic: N/AWideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. During phase I we will focus on : Al(2)0(3)/GaAs interface state density reduction, investigate the electrical and thermal stability of Al(2)0(3), and develop the LDD MOSFET technology for low phase noise ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Ultra Low-Loss Optoelectronic Packaging
SBC: RADIANT RESEARCH, INC. Topic: N/AConventional optoelectronic packaging technologies failed to provide low-loss coupling among various optoelectronic devices that are pivotal for BMDO-mission-related tasks. To bridge different effective apertures of various optoelectronic devices are the major bottleneck needs to be overcome. Radiant Research, Inc., proposes a drastically new idea to solve this problem by introducing a mode-matche ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Ultra-Low Cost Rigid-Rod Polymers
SBC: Maxdem, Inc. Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/ASilicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Ultrafine SiC for Optical Mirrors
SBC: MATERIALS MODIFICATIONS INC Topic: N/ASiC has exceptionally high thermal conductivity and low linear expansion coefficient to resist thermal distortion, high elastic modulus to resist pressure and bowing distortion. It is lightweight and wear resistant. It also has excellent corrosion resistance and outstanding load bearing characteristics at elevated temperatures. Its hardness is only surpassed by diamond, CBN and boron carbide. As ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency