Award Data

This Phase I SBIR Proposal outlines a program directed toward the development of highly efficient white light sources or multiple color sources by combining the photoluminescence from semiconducting conjugated polymers with the emission from high efficiency Group III-Nitride based LEDs; the Group III-Nitride LED provides the blue component of the emission spectrum and, simultaneously, serves as th ...

Avenda Systems proposes a voice over IP security architecture and solution called VoIP Inter-domain Security Architecture (VISA). VISA system will provide the architectural foundations to secure voice traffic within a security domain (intra-domain) and across a security domain (inter-domain). This is currently a feature gap in enterprise VOIP solutions. Avenda Systems has the expertise to develop ...

The recent development of the CMOS active pixel sensor (APS) by the proposers during their former employment at NASA's Jet Propulsion Laboratory has, for the first time, permitted large scale integration of supporting circuitry and smart camera functions on the same chip as a high performance image sensor. One of the major challenges facing any image sensor is the ability to handle scenes with wi ...

We propose to develop a method to manufacture high-performance, low-cost, radiation hard digital integrated circuits (IC) on-demand in small and medium volumes. Our manufacturing approach integrates a unique micromachining etch process with the best cost, performance, and rapid-reaction features of modern gate array and shared mask fabrication technologies. In addition, the power dissipated by ICs ...

This Phase I SBIR demonstrates the underlying technology required to construct an ultraspectral imager that has the ability to spectrally resolve molecular absorption lines while simultaneously creating a two dimensional spatial mapping. The proposed instrument will have a spectral resolution that is better than 2 cm-1 and two dimensional spatial resolution that exceeds 2 milliradian. Based on Fou ...

WideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. During phase I we will focus on : Al(2)0(3)/GaAs interface state density reduction, investigate the electrical and thermal stability of Al(2)0(3), and develop the LDD MOSFET technology for low phase noise ...

Conventional optoelectronic packaging technologies failed to provide low-loss coupling among various optoelectronic devices that are pivotal for BMDO-mission-related tasks. To bridge different effective apertures of various optoelectronic devices are the major bottleneck needs to be overcome. Radiant Research, Inc., proposes a drastically new idea to solve this problem by introducing a mode-matche ...

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Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

SiC has exceptionally high thermal conductivity and low linear expansion coefficient to resist thermal distortion, high elastic modulus to resist pressure and bowing distortion. It is lightweight and wear resistant. It also has excellent corrosion resistance and outstanding load bearing characteristics at elevated temperatures. Its hardness is only surpassed by diamond, CBN and boron carbide. As ...