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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. White Light from GaN/Conjugated Polymer Hybrid LEDs

    SBC: UNIAX Corporation            Topic: N/A

    This Phase I SBIR Proposal outlines a program directed toward the development of highly efficient white light sources or multiple color sources by combining the photoluminescence from semiconducting conjugated polymers with the emission from high efficiency Group III-Nitride based LEDs; the Group III-Nitride LED provides the blue component of the emission spectrum and, simultaneously, serves as th ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Visible CMOS Imager with Ultra High Dynamic Range

    SBC: Photobit Corporation            Topic: N/A

    The recent development of the CMOS active pixel sensor (APS) by the proposers during their former employment at NASA's Jet Propulsion Laboratory has, for the first time, permitted large scale integration of supporting circuitry and smart camera functions on the same chip as a high performance image sensor. One of the major challenges facing any image sensor is the ability to handle scenes with wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Very Low Cost Custom Radiation Hard CMOS Integrated Circuit Manufacturing Process

    SBC: Tanner Research, Inc.            Topic: N/A

    We propose to develop a method to manufacture high-performance, low-cost, radiation hard digital integrated circuits (IC) on-demand in small and medium volumes. Our manufacturing approach integrates a unique micromachining etch process with the best cost, performance, and rapid-reaction features of modern gate array and shared mask fabrication technologies. In addition, the power dissipated by ICs ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Ultraspectral Imager

    SBC: Kestrel Corporation            Topic: N/A

    This Phase I SBIR demonstrates the underlying technology required to construct an ultraspectral imager that has the ability to spectrally resolve molecular absorption lines while simultaneously creating a two dimensional spatial mapping. The proposed instrument will have a spectral resolution that is better than 2 cm-1 and two dimensional spatial resolution that exceeds 2 milliradian. Based on Fou ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. Ultra Low Phase Noise GaAs MOSFETs

    SBC: Witech (widegap Technology,            Topic: N/A

    WideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. During phase I we will focus on : Al(2)0(3)/GaAs interface state density reduction, investigate the electrical and thermal stability of Al(2)0(3), and develop the LDD MOSFET technology for low phase noise ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  6. Ultra Low-Loss Optoelectronic Packaging

    SBC: RADIANT RESEARCH, INC.            Topic: N/A

    Conventional optoelectronic packaging technologies failed to provide low-loss coupling among various optoelectronic devices that are pivotal for BMDO-mission-related tasks. To bridge different effective apertures of various optoelectronic devices are the major bottleneck needs to be overcome. Radiant Research, Inc., proposes a drastically new idea to solve this problem by introducing a mode-matche ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. Ultra-Low Cost Rigid-Rod Polymers

    SBC: Maxdem, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  8. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Ultrafine SiC for Optical Mirrors

    SBC: Materials Modifications Inc.            Topic: N/A

    SiC has exceptionally high thermal conductivity and low linear expansion coefficient to resist thermal distortion, high elastic modulus to resist pressure and bowing distortion. It is lightweight and wear resistant. It also has excellent corrosion resistance and outstanding load bearing characteristics at elevated temperatures. Its hardness is only surpassed by diamond, CBN and boron carbide. As ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  10. Ultrafine HfC/TaC for Rocket Thrusters

    SBC: Materials Modifications Inc.            Topic: N/A

    Liquid rocket engine performance can be dramatically improved by increasing the wall temperatures for operation concurrent with a reduction in the component weight. The bipropellant fuel combustion temperatures are between 3000 "approx" 3500 C. The conventional thrusters and exit nozzles made of niobium alloys have a maximum operating temperature limit of 1600 C. A regenerative cooling technolo ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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