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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Revolutionary Epoxy Technology for High Tg MCM Substrates

    SBC: Aguila Technologies, Inc.            Topic: N/A

    The goal of this program is the development of low cost, low viscosity and high performance epoxy resins cured by a novel method, for use in multichip modules (MCM) substrates. The revolutionary epoxy resin, invented by the principle investigator of this proposal, has very high temperature performance (Tg of 280_C to 320_C), low dielectric constant (less than 3), and outstanding moisture resistanc ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Advanced Low-k Dielectrics by the Sol-Gel Process

    SBC: Chemat Technology, Inc.            Topic: N/A

    In this proposal, we plan to synthesize a novel, new, UV-curable and fluorinated polymer using fluoronation and sol-gel process. This polymer has been proven to be a good replacement for spin-on glass (SOG). This polymer can be converted to a highly porous organic/inorganic composite at relatively low process temperature by controlling heat treatment temperatures, atmospheres and the sequence. Thi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Imaging LIDAR Camera

    SBC: Delta Optics            Topic: N/A

    Optics proposes the development of a novel laser radar system. The system presented overcomes the limitations of existing 'time-of-flight' and coherent sensor systems and requires no scanning of the laser beam. We propose to use a pulsed laser to illuminate the scene, a gated solid state charged coupled device (CCD) camera and a novel phase detection technique. The amplitude of the reflected signa ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. A Precision Voltage Regulator for Wide Analog to Digital Converters

    SBC: FULL CIRCLE RESEARCH, INC.            Topic: N/A

    Full Circle REsearch, Inc. (FCR) proposes a Small Business Innovative Research (SBIR) program to develop an IC compatible, rad-hard precision voltage reference (PVR) with the stability under temperature and radiation required by military and commercial space electronic systems. Stable reference voltages are required for a variety of electronic systems for use in space such as high resolution A/D c ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Embedded Sensors via Laser Engineered Net Shaping

    SBC: OPTOMEC, INC.            Topic: N/A

    Optomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Adding Product Lines, Architecture and Software Reuse to the Software Acquisition Capability Maturity Model (SA-CMM)

    SBC: REIFER CONSULTANTS L.L.C.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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