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Award Data
The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.
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Ion-Implanted 2-D MESFET Technology for Wireless Communications
SBC: Advanced Device Technologies, Topic: N/AThis Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method
SBC: CCVD, Inc dba MicroCoating Technologies (MCT) Topic: N/ACurrently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Production Friendly GaN Coatings Using RECVD, a New CVD Method
SBC: CCVD, Inc dba MicroCoating Technologies (MCT) Topic: N/ACurrently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Powder Synthesis and Bulk Crystal Growth of Gallium Nitride
SBC: CERMET, INC. Topic: N/AThe primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting technique. Since GaN demonstrates peritectic-type decomposition at atmospheric pressure, the entire sku ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Sensors-Adaptive Beam Expander
SBC: LSA Topic: N/AWe propose to design and fabricate an adaptive beam expander that can be switched between two magnifications. Specifically, the beam expander provides diffraction-limited performance for laser radar beams with diameters of 1 mm and 3 mm. The adaptive beam expander is lightweight, and it has no moving parts. Because the beam expander is an afocal system, it operates on both outgoing and incoming be ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Plasma Synthesis of Aluminum Nitride Nanopowders
SBC: Materials Modifications Inc. Topic: N/AAluminum nitride is as an ideal thermal management material since it has a very high thermal conductivity and its electrical resistivity is comparable to that of ceramic insulators. Aluminum nitride has thermal conductivity five times greater than alumina and has mechanical strength twice that of alumina and beryllium oxide. The current methods of synthesizing and consolidating aluminum nitride re ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Application of a Novel Micromachining Process to Millimeter Wave Circuit Fabrication
SBC: MICROFAB (WASVA MILLIMETER WAVE) Topic: N/AMicroFab Research (MFR, Inc.) proposes to apply the techniques of micromachining to aid in the fabrication of millimeter wave components, thereby reducing manufacturing expenses. Many microwave applications such as radar and communication systems would be improved by shifting to higher frequencies, provided new lower cost manufacturing techniques can be found. A manufacturing technique is presente ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Development of a Compact Electron Beam Accelerator
SBC: MICROWAVE TECHNOLGIES, INC. Topic: N/AN/A
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Advanced Metal Powder Manufacture for MLCC Applications
SBC: NANOCHEM RESEARCH, INC. Topic: N/ASensors, capacitors, and conducting features such as resistors and capacitors on circuit boards are produced from metal and ceramic powders 1-12 These powders are manufactured by liquid phase precipitation routes which often start with reduction of metal salts or by solid-state routes where solid reactants are mixed, heated and then milled. The solid-state processing is generally repeated several ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Embedded Sensors via Laser Engineered Net Shaping
SBC: OPTOMEC, INC. Topic: N/AOptomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency