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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. LASER ALLOYING OF PLASMA-DEPOSITED COATINGS FOR PROTECTION AGAINST ATOMIC OXYGEN

    SBC: American Research Corporation of Virginia            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  3. OPTIMAL ENERGY MANAGEMENT FOR KINETIC ENERGY WEAPONS

    SBC: BARRON ASSOCIATES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  4. Infrared Detectors Using Mercury Manganese Telluride

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    In the proposed research we will investigate methods for improving the performance of very long wavelength infrared (VLWIR) photovoltaic detectors fabricated from Hg1-xMnxTe. This material was chosen because Hg1-xMnxTe has been shown to have superior mechanical, chemical and thermal stability compared Hg1-xCdxTe. During previously SBIR-BMDO funded work, Brimrose Corporation successfully fabricate ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. InP Solar Cell on Porous Silicon for Improved Solar Energy Conversion

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Brimrose Corporation has developed a novel low-temperature and low energy ion-beam assisted growth process for minimizing the problems and improving the quality of the hetero epitaxial films of III-V compound semiconductors on foreign substrates such as silicon, germanium, etc. The improvement in the quality of hetero epitaxial InP/Si films will be achieved by using this novel low temperature grow ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  6. AlxGa(1-x)N Solar Blind Detector Material Device Structure Growth & Evaluation

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Phase I technical objectives of Brimrose Corporation are two fold. They are: 1) Epitaxial growth of AlxGa1-xN solar blind detector material device structure on new lattice and thermal matched substrates and evaluation of the material properties. The film growth will be carried out in Brimrose Corporation's 'Novel' ECR MOMBE Reactor using rare earth permanent magnets; 2) Preliminary epitaxial growt ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. Novel Photorefractive Time-Integrating Detector for the Radar Signal Processing

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Using newly developed II-VI photorefractive semiconductors as time integrator and high performance TeO2 acousto optic deflectors (AODs), Brimrose proposes to develop a compact RF signal processor useful in radar signal processing. The high sensitivity of this relatively new photorefractives, in the wavelength range of 0.63ym to 1.6,um, will allow signal processing using low power near infrared las ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Optical Power Limiters

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  9. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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