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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Powder Synthesis and Bulk Crystal Growth of Gallium Nitride

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting technique. Since GaN demonstrates peritectic-type decomposition at atmospheric pressure, the entire sku ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Object-Oriented Data Collection and Fusion

    SBC: CYBERNET SYSTEMS CORPORATION            Topic: N/A

    This proposal suggests that a basic data collection, management, and fusion framework is ideally suited for integrating distributed data from multiple heterogeneous sources and making it available on a multi-point basis for analysis, viewing, and C**4I applications. The basic framework proposed was built (and is currently under ongoing development) to support object-oriented, temporally consistent ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Development of Diode-Pumped Tunable Ultrafast Mid-Infrared laser Using CO2+-Doped II-VI Crystals

    SBC: First American International            Topic: N/A

    One of the most interesting wavelengths for many science and engineering applications is the mid-infrared band. We propose to develop a new compact tunable laser with output wavelength from 3 to 4 micrometers, pumped by powerful AlGaAs semiconductor lasers. The laser will use a new and less-explored lasing material, Co doped II-VI semiconductors, as the gain medium. The lasing medium has a strong ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Adaptive Signal Conditioning and Calibration of Microelectromechanical Systems (MEMS)

    SBC: IC TECH, INC.            Topic: N/A

    A strong analogy exists between today's MEMS device and the first prototypes of the transistor. Research and development in semiconducto devices made the integration of millions of transistors into a single chip possible. It is anticipated that similar market forces will deman the integration of hundreds and later thousands of MEMS based sensors and actuators onto the same substrate in the next de ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Computer Architecture, Algorithms, Models and Simulations

    SBC: INFORMATION SYSTEMS LABORATORIES, INC.            Topic: N/A

    Reconfigurable computing architectures based on Field Programmable Gate Arrays (FPGAs) offer extaordinary real time processing rates in inexpensive programmable hardware. The key to using FPGAs for reconfigurable computing is to reformulate algorithms in terms of parallel operations that are easily implemented with chains of simple processing elements. Currently available commercial integrated cir ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Sensors-Adaptive Beam Expander

    SBC: LSA            Topic: N/A

    We propose to design and fabricate an adaptive beam expander that can be switched between two magnifications. Specifically, the beam expander provides diffraction-limited performance for laser radar beams with diameters of 1 mm and 3 mm. The adaptive beam expander is lightweight, and it has no moving parts. Because the beam expander is an afocal system, it operates on both outgoing and incoming be ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Plasma Synthesis of Aluminum Nitride Nanopowders

    SBC: Materials Modifications Inc.            Topic: N/A

    Aluminum nitride is as an ideal thermal management material since it has a very high thermal conductivity and its electrical resistivity is comparable to that of ceramic insulators. Aluminum nitride has thermal conductivity five times greater than alumina and has mechanical strength twice that of alumina and beryllium oxide. The current methods of synthesizing and consolidating aluminum nitride re ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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