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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. 2-Dimensional, Microchannel Plate, Anti-scatter Focusing Grid for Superior X-ray Imaging Instruments

    SBC: ALAMEDA APPLIED SCIENCES CORPORATION            Topic: N/A

    Alameda Applied Sciences Corporation (AASC) proposes to develop a new class of x-ray imaging instruments based on a 2-dimensional, square-pore microchannel plate technology. This square-pore technology could lead to higher sensitivity x-ray telescopes in astronomy, wide field of view sensors for the BMDO mission and to superior anti-scatter grids to enhance contrast and resolution in mammography s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Photorefractive Optical Limiter for Sensor Protection

    SBC: Accuwave Corp.            Topic: N/A

    Accuwave Corporation will demonstrate an optical limiter for sensor protection using two-beam coupling in a photorefrac-tive material to attenuate coherent input light while leaving incoherent light unaffected. Methods for decreasing response time in BaTiO3, SBN, and similar materials will be investigated. A laboratory breadboard telescope system with an integrated limiting element will be demonst ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Development of a Woven Grid Quasi-Bipolar Battery

    SBC: AEROVIRONMENT, INC.            Topic: N/A

    A new high-power, high voltage sealed, quasi-bipolar lead acid battery design is proposed for development which can operate under the broad range of conditions important to the Air Force. Key features of the design include: Low cost 700 W/kg, calculated Very high power density >1800 W/I, calculated Moderate specific energy >50 Wh/kg @ C/2, calculated Good energy density >120 Wh/I @ C/2, calculate ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Revolutionary Epoxy Technology for High Tg MCM Substrates

    SBC: Aguila Technologies, Inc.            Topic: N/A

    The goal of this program is the development of low cost, low viscosity and high performance epoxy resins cured by a novel method, for use in multichip modules (MCM) substrates. The revolutionary epoxy resin, invented by the principle investigator of this proposal, has very high temperature performance (Tg of 280_C to 320_C), low dielectric constant (less than 3), and outstanding moisture resistanc ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. All Digital Imager with per Pixel on focal Plan Analog to Digital Conversion and Digital Display

    SBC: AMAIN ELECTRONICS CO., INC.            Topic: N/A

    As the size of staring sensors increase, the bandwidth to move data off the focal plane increases proportional to the number of pixels in the array. For analog focal planes, increased bandwidth also means increased noise. Readout noise limited systems wili be less sensitive, detector noise limited systems may become readout limited at the higher bandwidths. Power dissipation wili also increase wit ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Production of Semiconductor Grade Crystals from Recovered GaAs and InP Manufacturing Wastes

    SBC: AMERICAN XTAL TECHNOLOGY            Topic: N/A

    On-site recovery of constituent materials from compound semiconductor waste streams presents an opportunity for reduction of hazardous material waste and cost of manufacturing. UDRI has developed a low-cost process for recovering gallium and arsenic from the production of gallium arsenide where the primary contaminant is the other element of the binary compound. This method can be applied to other ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. A Pulsed-Power Driven Krypton Soft X-Ray Laser Based on A Stabilized Z-Pinch Load

    SBC: BERKELEY RESEARCH ASSOC., INC.            Topic: N/A

    Pulsed power is known to be the most efficient way of converting stored electrical energy into plasma thermal energy. Such plasma thermal energy would be available for pumping a soft x-ray laser. High-gain 3s - 3p transitions in neon-like krypton are very attractive for lasing (high rate of collisional excitation to the upper lasing level, fast decay of lower lasing level). Existsng pulsed-power d ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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