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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. NEXT GENERATION ULTRA WIDEBAND (UWB) INTRUSTION DETECTION RADAR FOR THE PROTECTION OF NUCLEAR FACILITIES

    SBC: Anro Engineering, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseDefense Threat Reduction Agency
  2. Batteryless Sensors for Intrusion Detection and Assessment of Threats

    SBC: Anro Engineering, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseDefense Threat Reduction Agency
  3. GAMMA RAY SPECTROMETER/DOSIMETER

    SBC: Applied Inventions Corp.            Topic: N/A

    N/A

    SBIR Phase I 1990 Nuclear Regulatory Commission
  4. Nuclear Weapons Effects Phenomenology

    SBC: Applied Physics Technologies            Topic: N/A

    The nuclear weapons community has traditionally focused on the next generation or level of weapon capability complimented by gathering and analysis of actual test data. Now, with the cessation of actual weapons testing, there is an increased need to use the actual test data in modeling techniques to better understand the phenomenology and potential effects of nuclear weapons. The first phase of ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  5. Laser Turbulence Measurements in the LB/TS

    SBC: Applied Research Associates, Inc.            Topic: N/A

    Turbulence of gas flows by its very nature is one of the most difficult things to model and measure. We propose to develop a new way of measuring the turbulence and to compare these measurements to predictions using the k-epsilon model. Typical measurements, in the past, use smoke, Schlierin or shadow graph techniques to visually infer turbulence characteristics. These features are either motio ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  6. High Performance Dielectrics for High Energy Density Capacitors

    SBC: Aspen Systems, Inc.            Topic: N/A

    Aspen Systems proposes to develop high dielectric constant (K), low loss tellurium polymers to meet the design objectives of high energy density capacitors. In the proposed Phase I program we will apply rigorous computational chemical techniques to predict the properties of this new class of polymers. We will attempt the synthesis of the parent polymer of the tellurium family, fabricate films for ...

    SBIR Phase I 1994 Department of DefenseDefense Threat Reduction Agency
  7. IMPROVED SIMOX SOI BY INDEPENDENT CONTROL OF BEAM CURRENT DENSITY AND WAFER IMPLANT TEMPERATURE

    SBC: IBIS TECHNOLOGY CORP.            Topic: N/A

    THE BUILT-IN BURIED OXIDE OF SIMOX SOI MATERIAL HAS PROMOTED RECENT ADVANCES IN RADIATION-HARDENED, AEROSPACE, AUTOMTIVE, AND COMMUNICATIONS APPLICATIONS. A SIGNIFCANT ISSUE RELATED TO THE USE OF SIMOX TECHNOLOGY IS THE CAPABILITY OF THE SI AND BURIED OXIDE LAYERS TO SUPPORT ADBANCED CMOS AND BIPOLAR CIRCUITRY. RECENT TECHNIQUES FOR SILICON AND BURIED OXIDE DEFECT DENSITY MEASUREMENTS SHOW THAT FU ...

    SBIR Phase II 1994 Department of DefenseDefense Threat Reduction Agency
  8. Radiation Hardened Silicon-on-Insulator Substrates for Advanced Electronics

    SBC: IBIS TECHNOLOGY CORP.            Topic: N/A

    SIMOX (Separation by Implanted Oxygen) technology achieves total dielectric isolation of active device regions from the substrate and reduces the collection path for ionized charges via the built-in buried oxide which restricts charge movement. Advances in SIMOX technology include radiation hardened memories and gate arrays for space applications, ULSI DRAMs for low voltage operation, thin film SO ...

    SBIR Phase II 1996 Department of DefenseDefense Threat Reduction Agency
  9. Thin Buried Oxide Densification for Radiation Hardened 80nm BOX SIMOX Substrates

    SBC: IBIS TECHNOLOGY CORP.            Topic: N/A

    SIMOX (Separation by IMplanted Oxygen) technology achieves total dielelectric isolation of active device regions from the substrate and reduces the collection path for ionized charges via the built-in buried oxide which restricts charge movement. Advances in SIMOX technology include radiation hardened memories and gate arrays for space applications, ULSI DRAMS for low voltage operation, thin film ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  10. Radiation Hardened Silicon-on-Insulator Substrates for Advanced Electronics

    SBC: IBIS TECHNOLOGY CORP.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseDefense Threat Reduction Agency
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