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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. LOW COST MULTILAYERED PZT CAPACITORS MADE USING CCVD

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. Powder Synthesis and Bulk Crystal Growth of Gallium Nitride

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting technique. Since GaN demonstrates peritectic-type decomposition at atmospheric pressure, the entire sku ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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