Award Data

Recent research has shown that effective jammer and clutter suppression is best performed with fully space-time adaptive processing. However, allowing adaptive weights on every tap on every element is computationally prohibitive and requires too many samples to converge. Eigenvalue analysis shows that the required number of degrees of freedom (DOF) is significantly less than the dimensionality of ...

Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

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The objective of this project is to develop a model of the growth (thickness and doping profile) of epi-silicon layers. This model will be used in conjunction with on-line Fourier Transform Infrared (FT-IR) reflectance measurements to control epi-silicon growth in a cluster tool. AFR has successfully performed a field test at Texas Instruments for single-wafer epi-silicon film deposition in the co ...

The development of advanced high speed aircraft using hydrocarbon fuels will require fuels which have very high thermal stability, including fuels which are stable above the critical temperature and pressure. The elucidation of the chemcial mechanisms for fuel degradation would greatly benefit from the availability of on-line diagnostics for measurement of these products. The Phase I proposal is t ...

SiC is an attractive material for high temperature, high frequency and high power electronic applications because of its wide band gap, high thermal conductivity, and high breakdown voltage. Two polytypes of SiC which have received the most attention are the 3C cubic structure and the 6H hexagonal structure due to their individual properties of higher electron mobility (1000 cm3/Vs) and larger ban ...

The AF requires a portable instrument to measure thermal reflectance signatures from target surfaces. In the field, measurements include 1) total integrated scatter; 2) retro-reflected scatter; 3) angular scatter from normal incidense to 75 degrees off-normal; and 4) parallel and perpendicular polarization components of reflectance. Advanced Fuel Research, Inc., (AFR) previously delivered a benc ...