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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. OpenROOM: Architecture for Real-Time Objects

    SBC: Advanced Systems & Technologies Inc            Topic: N/A

    The ultimate purpose of the proposed R&D is to develop and demonstrate an innovative software development environment which supports the engineering, analysis, development, test, maintenance, and reuse of software for embedded, heterogeneous, real-time systems. The proposed approach is innovative in two respects: (1) it is based on the integration of two best-of-breed environments, ObjecTime/ROOM ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  3. Mission Flexible, Low Cost, Suborbital Launch Vehicle

    SBC: AEROASTRO, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  4. Wide Bandgap Semiconductors for High-Temperature Electronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL BE THE STUDY OF ELECTRODE TECHNOLOGY TO MAKE OHMIC CONTACTS THAT ARE STABLE AT HIGH TEMPERATURE AND IN THE PRESENCE OF AN ELECTRIC BIAS. THE APPROPRIATE METALLIZATION MUST RESIST BOTH THERMAL DIFFUSI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  5. ECR-Ion Beam Deposition for III-Nitride Semiconductors

    SBC: ASTRALUX, INC.            Topic: N/A

    WE PROPOSE TO DEVELOP AND STUDY A NEW MANUFACTURING TECHNOLOGY FOR THE EPITAXIAL GROWTH OF MULTILAYERS OF III-NITRIDES SEMICONDUCTORS (GaN AND AlGaN) AT TEMPERATURES SUBSTANTIALLY LOWER THAN PRESENTLY ACHIEVED. THE TECHNIQUE IS BASED ON THE ION BEAM DEPOSITION SYSTEM WHERE THE IONS ARE GENERATED BY AN ELECTRON CYCLOTRON RESONANCE (ECR) MICROWAVE PLASMA. THE ENERGY OF THE IONS INCIDENT ON THE SUBST ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  6. Rare Earth Doped III-V Semiconductor for Optoelectronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THE PROPOSED RESEARCH AND DEVELOPMENT EFFORT WILL EXPLORE THE ELECTROLUMINESCENCE PROPERTIES OF RARE EARTH ELEMENTS IN A III-V SEMICONDUCTOR. THE TECHNIQUE OF IMPACT EXCITATION, CURRENTLY USED IN COMMERCIALLY AVAILABLE ELECTROLUMINESCENCE DISPLAY DEVICES, WILL BE STUDIED FOR EXCITING THE RARE EARTHS. WE HAVE ALREADY DEMONSTRATED THE POSSIBILITY OF GENERATING VISIBLE LIGHT BY HOT ELECTRON IMPACT EX ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. Biotechnology Applied Nanostructures

    SBC: ASTRALUX, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  8. CHARACTERIZATION OF CONCRETE CONDITION USING ACOUSTIC TOMOGRAPHIC IMAGING

    SBC: Atkinson-noland Assoc. Inc.            Topic: N/A

    N/A

    SBIR Phase I 1993 Nuclear Regulatory Commission
  9. Position Sensor for Segmented Adaptive Optics

    SBC: Blue Line Engineering Co            Topic: N/A

    There is a serious need for new types of position sensors for use with adaptive optics systems which employ segmented mirrors. In particular, sensors which enable the system to control and maintain the phase matching of the mirrored surfaces of adjacent segments to accuracies of a few nanometers are needed. Blue Line Engineering Co. proposes to develop a novel type of sensor which will be suitable ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  10. Infrared Photo Transistor Based on Inter-Valence Sub-Band Transition

    SBC: C & W Microfab, Inc.            Topic: N/A

    A novel quantum well infrared photo transistor, which we call QWIPT, is proposed. By taking the advantage of the almost perfect alignment of the conduction band in GaAsSb/InAlAs system, it is possible to integrate such quantum wells into a QWIPT to improve the optical gain and, therefore, the detectivity of the p-QWIP. We expect, by incorporating molecular beam epitaxy growth interruption scheme, ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
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