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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. OpenROOM: Architecture for Real-Time Objects

    SBC: Advanced Systems & Technologies Inc            Topic: N/A

    The ultimate purpose of the proposed R&D is to develop and demonstrate an innovative software development environment which supports the engineering, analysis, development, test, maintenance, and reuse of software for embedded, heterogeneous, real-time systems. The proposed approach is innovative in two respects: (1) it is based on the integration of two best-of-breed environments, ObjecTime/ROOM ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  3. Mission Flexible, Low Cost, Suborbital Launch Vehicle

    SBC: AEROASTRO, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  4. Wide Bandgap Semiconductors for High-Temperature Electronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL BE THE STUDY OF ELECTRODE TECHNOLOGY TO MAKE OHMIC CONTACTS THAT ARE STABLE AT HIGH TEMPERATURE AND IN THE PRESENCE OF AN ELECTRIC BIAS. THE APPROPRIATE METALLIZATION MUST RESIST BOTH THERMAL DIFFUSI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  5. ECR-Ion Beam Deposition for III-Nitride Semiconductors

    SBC: ASTRALUX, INC.            Topic: N/A

    WE PROPOSE TO DEVELOP AND STUDY A NEW MANUFACTURING TECHNOLOGY FOR THE EPITAXIAL GROWTH OF MULTILAYERS OF III-NITRIDES SEMICONDUCTORS (GaN AND AlGaN) AT TEMPERATURES SUBSTANTIALLY LOWER THAN PRESENTLY ACHIEVED. THE TECHNIQUE IS BASED ON THE ION BEAM DEPOSITION SYSTEM WHERE THE IONS ARE GENERATED BY AN ELECTRON CYCLOTRON RESONANCE (ECR) MICROWAVE PLASMA. THE ENERGY OF THE IONS INCIDENT ON THE SUBST ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  6. Rare Earth Doped III-V Semiconductor for Optoelectronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THE PROPOSED RESEARCH AND DEVELOPMENT EFFORT WILL EXPLORE THE ELECTROLUMINESCENCE PROPERTIES OF RARE EARTH ELEMENTS IN A III-V SEMICONDUCTOR. THE TECHNIQUE OF IMPACT EXCITATION, CURRENTLY USED IN COMMERCIALLY AVAILABLE ELECTROLUMINESCENCE DISPLAY DEVICES, WILL BE STUDIED FOR EXCITING THE RARE EARTHS. WE HAVE ALREADY DEMONSTRATED THE POSSIBILITY OF GENERATING VISIBLE LIGHT BY HOT ELECTRON IMPACT EX ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. Biotechnology Applied Nanostructures

    SBC: ASTRALUX, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  8. CHARACTERIZATION OF CONCRETE CONDITION USING ACOUSTIC TOMOGRAPHIC IMAGING

    SBC: Atkinson-noland Assoc. Inc.            Topic: N/A

    N/A

    SBIR Phase I 1993 Nuclear Regulatory Commission
  9. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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