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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Mission Flexible, Low Cost, Suborbital Launch Vehicle

    SBC: AEROASTRO, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  3. MULTI LEVEL SECURE IMAGE OPERATING SYSTEM

    SBC: ARIES Technology Corporation            Topic: N/A

    This proposed study will accomplish the following: Investigate methods for allocating image resources in MLS operating systems. Investigate methods for controlling image processes from MLS (OS). Develop algorithms for efficient image management in MLS OSs. Develop algorithms for efficient image processing security in MLS OSs. Provide a framework for automatic downgrading of images using a MLS OS. ...

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
  4. Infrared Photo Transistor Based on Inter-Valence Sub-Band Transition

    SBC: C & W Microfab, Inc.            Topic: N/A

    A novel quantum well infrared photo transistor, which we call QWIPT, is proposed. By taking the advantage of the almost perfect alignment of the conduction band in GaAsSb/InAlAs system, it is possible to integrate such quantum wells into a QWIPT to improve the optical gain and, therefore, the detectivity of the p-QWIP. We expect, by incorporating molecular beam epitaxy growth interruption scheme, ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  5. LOW COST MULTILAYERED PZT CAPACITORS MADE USING CCVD

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Combustion chemical vapor deposition (CCVD), which was invented by the principal investigator, is a high quality film deposition technique that can inexpensively and quickly apply lead zirconate-titanate (PZT) thin films in a continuos manner. This technology can be used for the production of ferroelectric capacitors. CCVD is low cost, high quality and versatile. It does not require a reaction cha ...

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
  6. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Low Cost Multilayered PZT Capacitors Made Using CCVD

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    N/A

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
  9. Compact Infrared Grating Laser

    SBC: CENTER FOR REMOTE SENSING, INC.            Topic: N/A

    A THEORETICAL PROGRAM IS PROPOSED TO INVESTIGATE A COMPACT, LOW-VOLTAGE INFRARED GRATING LASER WITH MULTI-KILOWATT OUPUT CAPABILITY. THE RADIATION IS GENERATED BY THE PASSAGE OF AN ANNULAR BEAM OF ELECTRONS THROUGH A COAXIAL PAIR OF CONDUCTORS, THE INNER CONDUCTOR BEING A CORRUGATED CYLINDER WHICH FORMS THE GRATING. THE ELECTRON BEAM IS GUIDED BY AN AXIAL MAGNETIC FIELD. THE DIMENSIONS OF THE OPTI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  10. Powder Synthesis and Bulk Crystal Growth of Gallium Nitride

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting technique. Since GaN demonstrates peritectic-type decomposition at atmospheric pressure, the entire sku ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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