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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Sensors-Adaptive Beam Expander

    SBC: LSA            Topic: N/A

    We propose to design and fabricate an adaptive beam expander that can be switched between two magnifications. Specifically, the beam expander provides diffraction-limited performance for laser radar beams with diameters of 1 mm and 3 mm. The adaptive beam expander is lightweight, and it has no moving parts. Because the beam expander is an afocal system, it operates on both outgoing and incoming be ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Nanomaterials for Thermal Management of Electronics

    SBC: Materials Modifications Inc.            Topic: N/A

    As electronic packaging densities increase, more heat is being generated per unit area. The reliability of electronic components is, therefore, increasingly dependent on the ability to transfer heat. Current chip performance is limited in keeping up with the increased power densities, 30% of which is attributed to packaging materials. The disadvantages of current methods of fabrication of thermal ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  8. Plasma Synthesis of Aluminum Nitride Nanopowders

    SBC: Materials Modifications Inc.            Topic: N/A

    Aluminum nitride is as an ideal thermal management material since it has a very high thermal conductivity and its electrical resistivity is comparable to that of ceramic insulators. Aluminum nitride has thermal conductivity five times greater than alumina and has mechanical strength twice that of alumina and beryllium oxide. The current methods of synthesizing and consolidating aluminum nitride re ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Application of a Novel Micromachining Process to Millimeter Wave Circuit Fabrication

    SBC: MICROFAB (WASVA MILLIMETER WAVE)            Topic: N/A

    MicroFab Research (MFR, Inc.) proposes to apply the techniques of micromachining to aid in the fabrication of millimeter wave components, thereby reducing manufacturing expenses. Many microwave applications such as radar and communication systems would be improved by shifting to higher frequencies, provided new lower cost manufacturing techniques can be found. A manufacturing technique is presente ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Pulsed High Energy Synthesis of Fine Metal Powders

    SBC: UTRON, Inc.            Topic: N/A

    Demand for micrometer size metal powders is increasing rapidly as new technologies emerge which can make use of their unique characteristics. One rapidly growing application requiring such powders is metal injection molding, a powder metallurgy process for forming near-net-shape components with higher dimensional accuracy than earlier processes. A significant need also exists for micrometer size s ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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