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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Development of a Compact Electron Beam Accelerator
SBC: MICROWAVE TECHNOLGIES, INC. Topic: N/AN/A
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/ASilicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Optimal SiC Source Powder for Bulk SiC Growth
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/AThe properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Novel Technology for Electronic Multilayer Devices
SBC: Sumi Tech, Inc. Topic: N/AA novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Fullerene Hall Thruster Development
SBC: BUSEK CO., INC. Topic: N/AA Hall thruster (HT) using C60 fullerene as the propellant is currently being developed. The HT is a magnetized neutral plasma electrostatic thruster that has been successfully deployed by the Russians. Efficiencies of 50-70 % at Isp up to 3000 second were achieved, and lifetimes in thousands of hours were demonstrated. The HT performance may be improved by replacing the current propellant of choi ...
SBIR Phase I 1992 Department of DefenseMissile Defense Agency -
Non-Cryocooled Dual-Band Infrared Imager
SBC: EMPIRICAL TECHNOLOGIES CORPORATION Topic: N/ASDI requires dual band imaging technology. The approach may provide equivalent performance at far lower cost than discrete element IRFPA technologies. The project will develop a dual band IR imager using its photodichronic imaging (PDI) technology. A sensitive 8 to 12 micron imager has been demonstrated. Similarly designed materials have been demonstrated to be sensitive to different IR spectral b ...
SBIR Phase I 1992 Department of DefenseMissile Defense Agency -
Microchannel Plate Imaging Neutron Detector
SBC: NOVA SCIENTIFIC INCORPORATED Topic: N/AOne highly desired improvement for neutron sensing is an imaging neutron detector with high two-dimensional spatial resolution and a large detector area. At present, achievable real-time neutron imaging detector resolution is only about 1 mm. The innovation proposed is to adapt for neutron imaging the high spatial resolution Microchannel Plate (MCP) detector technology so widely used for detecting ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
MOCVD Growth of Epitaxial GaN on Lattice-Matched Substrates
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AThe III-V nitride semiconductor family affords many unique properties which make these materials attractive candidates for producing electronic and optoelectronic devices. Much progress has been made in epitaxial thin film growth of nitrides using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) during the last decade. These efforts are hindered by the lack of lattic ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
High Energy Cryogenic Varistors
SBC: BUSEK CO., INC. Topic: N/AHigh energy (>1kJ/cc) varistors operating at cryogenic temperatures (
SBIR Phase I 1992 Department of DefenseMissile Defense Agency -
Silicon Carbide-Silicon Carbide Composites
SBC: Phasex Corporation Topic: N/ACeramic composites of silicon carbide fibers in a silicon carbide matrix are currently produced via CVD infiltration (CVI), but the requisite high temperature for CVI can partially degrade the fibers. Infiltrating a SiC precursor polymer into a fiber preform and subsequently converting the polymer at low temperature (
SBIR Phase I 1992 Department of DefenseMissile Defense Agency