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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. Mission Flexible, Low Cost, Suborbital Launch Vehicle

    SBC: AEROASTRO, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  6. Miniature Featherweight Semiconductor Microlaser

    SBC: Photonics Research, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. Hybrid Electro-optical Resonator For Image Classification

    SBC: Optoelectronic Data System            Topic: N/A

    WE PROPOSE TO BUILD A HYBRID ELECTRICAL-OPTICAL RESONATOR WHICH RETAINS THE LARGE NUMBER OF INDEPENDANT REFERENCE OBJECTS OF THE ALL-OPTICAL SYSTEMS, BUT SCALE TO MUCH HIGHER SPEEDS, AND PERFORMS SHIFT-INVARIANT RECOGNITION. THE LARGE NUMBER OF INDEPENDENT REFERENCES ARE STORED IN AVOLUME HOLOGRAM AS ANGUALRY MULTIPLEXED HOLOGRAMS. SHIFT INVARIANCE IS ACCOMPLISHED BY USING THESE REFERENCE IMAGE AS ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  8. Rare Earth Doped III-V Semiconductor for Optoelectronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THE PROPOSED RESEARCH AND DEVELOPMENT EFFORT WILL EXPLORE THE ELECTROLUMINESCENCE PROPERTIES OF RARE EARTH ELEMENTS IN A III-V SEMICONDUCTOR. THE TECHNIQUE OF IMPACT EXCITATION, CURRENTLY USED IN COMMERCIALLY AVAILABLE ELECTROLUMINESCENCE DISPLAY DEVICES, WILL BE STUDIED FOR EXCITING THE RARE EARTHS. WE HAVE ALREADY DEMONSTRATED THE POSSIBILITY OF GENERATING VISIBLE LIGHT BY HOT ELECTRON IMPACT EX ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  9. Wide Bandgap Semiconductors for High-Temperature Electronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL BE THE STUDY OF ELECTRODE TECHNOLOGY TO MAKE OHMIC CONTACTS THAT ARE STABLE AT HIGH TEMPERATURE AND IN THE PRESENCE OF AN ELECTRIC BIAS. THE APPROPRIATE METALLIZATION MUST RESIST BOTH THERMAL DIFFUSI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  10. Correct Distributed Simulation Protocol

    SBC: Geodynamics            Topic: N/A

    THE CORRECT DISTRIBUTED SIMULATION PROTOCOL (CDSP) IS A UNIQUE AND INNOVATIVE PROTOCOL THAT DIRECTLY ADDRESSES A NEED IN THE EMERGING TECHNOLOGY OF DISTRIBUTED SIMULATIONS. DISTRIBUTED TRAINING SIMULATIONS (SIMNET, DSI) DO NOT, AND ARE NOT REQUIRED TO PRODUCE CORRECT RESULTS. THEY NEED ONLY PROVIDE REALISTIC CUES. HOWEVERT, WHEN DISTRIBUTED SIMULATIONS ARE USED FOR ANALYSIS PURPOSES; FOR EXAMPLE, ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
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