You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Novel Technology for Electronic Multilayer Devices

    SBC: Sumi Tech, Inc.            Topic: N/A

    A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. Mission Flexible, Low Cost, Suborbital Launch Vehicle

    SBC: AEROASTRO, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  6. Magnetic Fluid Experiment

    SBC: Obital Technologies Corp            Topic: N/A

    THE STORAGE OF LIQUID CRYOGENS IN ZERO-G CONDITIONS WITH MINIMAL CRYOGEN LOSS AND HIGH DELIVERY RATES HAS BEEN RECOGNIZED AS AN ESSENTIAL REQUIREMENT IN SPACE APPLICATIONS FOR MANY YEARS. THE SUGGESTION IN THIS INVITATION TO CONSIDER A STORAGE SYSYEM THAT UTILIZES THE MAGNETIC PROPERTIES OF THE CRYOGENIC FLUID. MANY APPROACHES HAVE BEEN EXPLORED TO OVERCOME THE ZERO-G PROBLEM, SUCH AS ARTIFICIAL G ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. Hts Flux Flow Transistor

    SBC: Parkview Research &            Topic: N/A

    PARKVIEW RESEARCH & DEVELOPMENT, INC., PROPOSES THE STUDY OF THREE-TERMINAL DEVICES BASED ON SMALL GRAIN THIN HTS FILMS AND STEP EDGE JUNCTION MATRICES. NEW CONFIGURATIONS AND MATERIALS THAT ARE BELIEVED TO SHOW HIGH MAGNETIC FIELD SENSITIVITY HAVE BEEN IDENTIFIED AND WILL BE EXPLORED. BECAUSE OF THE HOPED FOR HIGH GAIN AND OPERATING SPEED IS SHOULD BE POSSIBLE TO EMPLOY SUCH DEVICES IN MICROWAVE ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  8. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. MULTI LEVEL SECURE IMAGE OPERATING SYSTEM

    SBC: ARIES Technology Corporation            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government