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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors

    SBC: EMCORE CORP.            Topic: N/A

    A successful large area ELO GaN process technology will lead to a low cost 'virtual substrate' for LED and high performance III-N based devices. We propose to investigate the application of this technique in large area III-Nitride MOCVD reactors, up to 42x2 sapphire and silicon substrates; the latter as a low cost alternative to sapphire for high volume/low cost devices. EMC ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  2. Smart Sensors for Imaging Applications

    SBC: M & D Technology Development            Topic: N/A

    ZnO material is a wide bandgap semiconductor and a piezoelectric material as well. ZnO is compatible with current Si process technology. Large area, high quality ZnO films can be deposited by MOCVD technique on various substrates, such as sapphire and Si at low growth temperature. We propose to develop a new smart sensor technology by integration of multifunctional ZnO sensors with Si IC for imagi ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  3. On-Line Monitoring of Moisture During Food Processing

    SBC: M.L. ENERGIA, INC.            Topic: N/A

    N/A

    SBIR Phase I 1998 Department of Agriculture
  4. Bandwidth Stabilized, Magnetically Tunable Superconducting Filters

    SBC: NEOCERA, LLC            Topic: N/A

    Successful development of High Temperature Superconducting (HTS) tunable devices such as multipole band pass filters and demonstration of their high-Q performance will lead to significant enhancements in several military and commercial communications systems The primary objective of the present SBIR program is to develop magnetically tunable HTS filter technology, integrating the superconducting p ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  5. Low Cost SOI Wafer Process for MEMS and VLSI Applications

    SBC: New Jersey Microsystems, Inc.            Topic: N/A

    MicSOI (silicon-on-insulator) material is a most promising substrate for military and commercial applications. The SOI process based on hydrogen-implantation, wafer splitting, and wafer bonding is the newest and the cheapest approach to SOI fabrication. We propose to develop hydrogen-implanted SOI wafer process for production with a focus on improving the quality of SOI thus improving radiation ha ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  6. Tunable Mid-Infrared Filters Based on Lithographically Fabricated Metal Meshes

    SBC: OPTOMECHANICAL ENTERPRISES, INC.            Topic: N/A

    Development of a high performance electronically tunable optical filter for the mid-infrared abling technology for spectral imaging, chemical vapor sensing and numerous other remote sensing applications. Tunable Fabry-Perot (F-P) filters have desirable features of high throughput (much needed in the mid-IR region where detectors are of low sensitivity ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  7. Direct Ga and N Ion Beam Epitaxy of GaN

    SBC: Skion Corp.            Topic: N/A

    Ballistic missile defense applications of the future will require ever more powerful electronic devices, capable of operation at high frequencies and power and able to withstand high temperatures. Gallium nitride is one of the most promising materials for such applications. Although a number of devices such as light emitting diodes and junction field effect transistors have been fabricated using G ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  8. Enhanced Contact Layer Organic Light Emitting Diodes

    SBC: STRUCTURED MATERIALS INDUSTRIES, INC.            Topic: N/A

    Organic based light emitting diodes have made significant advances in the past few years. An important factor in device performance is the transparent conducting contact layer. Presently, indium tin oxide (ITO) is used because it is an accepted standard and has a great deal of invested development. However, for several reasons, including work function, physical stability, and band alignment to org ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  9. A Multi-Layer Diamond Cathode for High Power Applications

    SBC: UHV TECHNOLOGIES, INC.            Topic: N/A

    A multi-layer diamond thin film field-emission cathode is proposed for high power applications such as UV lasers, high power switches, vacuum electronic devices and high--energy accelerators. The proposed optimization of various layers enables us to take advantage of high thermal conductivity of diamond to increase the maximum current obtained from each emission site thereby increasing the total c ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  10. Rapid Soil Testing Using Portable Sensing Technologies

    SBC: OPTIMAL SOLUTIONS INC            Topic: 84

    The goal of this SBIR Phase I project is to conduct research and prove the feasibility ofmeasuring soil properties using cutting-edge detectors customized optical accessories anddata processing algorithms.Our overall project goal is to bring to market a portable soilsensor which can analyze soil samples in near real-time in Phase II and beyond.Growers rely on soil analysis to help them assess the ...

    SBIR Phase I 2019 Department of Agriculture
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