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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ultra Low-Power Miniaturized Flexible Radio Optimized for Long-Term Battery Operation

    SBC: CROSSFIELD TECHNOLOGY LLC            Topic: DMEA07003

    Crossfield intends to develop a single chip software radio that is battery operated and can support high data rate wireless applications not currently addressed by off-the-shelf wireless standards such as IEEE802.15.4. By implementing a software radio, a single chip transceiver can interface to multiple transceiver “over the air” standards and can exploit new schemes as needed. The program w ...

    SBIR Phase I 2008 Department of DefenseDefense Microelectronics Activity
  2. In-Line Characterization System for Advanced High K Dielectric / Metal Gate CMOS Transistor Stack for the Development of High Speed, Low Power Microel

    SBC: INTERMOLECULAR, INC.            Topic: DMEA07002

    Throughout the history of integrated circuit fabrication, gate stack engineering has been employed to meet the aggressive device scaling necessary to stay on the Moore’s Law curve. However, as device dimensions continue to progress into the sub-100-nm regime, scaling of the traditional SiO2 gate dielectric led to issues with reliability, dopant penetration and excessive gate leakage current. O ...

    SBIR Phase I 2008 Department of DefenseDefense Microelectronics Activity
  3. High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development

    SBC: INTERMOLECULAR, INC.            Topic: DMEA07001

    The cost to maintain Moore’s law is growing exponentially with every generation of semiconductor device. To support the ever-increasing demand for smaller, faster, lower-power, and lower-cost microelectronic semiconductor devices, tools enabling faster and lower-cost research and development are required. Current development tools are only capable of achieving one data point per wafer. The goa ...

    SBIR Phase I 2008 Department of DefenseDefense Microelectronics Activity
  4. High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development

    SBC: INTERMOLECULAR, INC.            Topic: DMEA07001

    The cost to maintain Moore’s law is growing exponentially with every generation of semiconductor device. To support the ever-increasing demand for smaller, faster, lower-power, and lower-cost microelectronic semiconductor devices, tools enabling faster and lower-cost research and development are required. Current development tools are only capable of achieving one data point per wafer. The goal ...

    SBIR Phase II 2008 Department of DefenseDefense Microelectronics Activity
  5. In-Line Characterization System for Advanced High K Dielectric / Metal Gate CMOS Transistor Stack for the Development of High Speed, Low Power Microel

    SBC: INTERMOLECULAR, INC.            Topic: DMEA07002

    Throughout the history of integrated circuit fabrication, gate stack engineering has been employed to meet the aggressive device scaling necessary to stay on the Moore’s Law curve. However, as device dimensions continue to progress into the sub-100-nm regime, scaling of the traditional SiO2 gate dielectric led to issues with reliability, dopant penetration and excessive gate leakage current. Ove ...

    SBIR Phase II 2008 Department of DefenseDefense Microelectronics Activity
  6. High-Throughput Experimentation Physical Vapor Deposition (PVD) Chamber for Accelerated Microelectronics Materials Research and Development

    SBC: PVD Products, Inc.            Topic: DMEA07001

    Techniques for producing combinatorial materials are highly valued for their ability to produce compositional arrays that can be rapidly evaluated. A significant aspect that is still lacking in combinatorial film deposition is the ability to efficiently deposit multiple material conditions in specified isolated areas on a large silicon wafer while varying local composition and deposition conditio ...

    SBIR Phase I 2008 Department of DefenseDefense Microelectronics Activity
  7. Ultra Low-Power Miniaturized Flexible Radio Optimized for Long-Term Battery Operation

    SBC: WILLIAMSRDM, INC.            Topic: DMEA07003

    The DMEA needs a flexible, miniature, reconfigurable radio suitable for long-term operation (one year or more) on battery power and capable of being embedded in data collector nodes for deployed sensor arrays, sensors, and other applications where very low power consumption combined with flexibility is desired. To address flexibility in radios, Williams-Pyro has designed a highly innovative softwa ...

    SBIR Phase I 2008 Department of DefenseDefense Microelectronics Activity
  8. Series Resistance Reduction in Tunable Radio Frequency (RF) Capacitors

    SBC: AGILE RF, INC.            Topic: DMEA092001

    THE "CROWN DICE" CERAMIC ITEMS WILL BECOME AVAILABLE BY POURING CLAY INTO MOLDINGS , THAN BURNING THEM AT THE KILNS AND PAINTING THEM TO BE READY TO GO FOR THE SHELVES . THE DESIGN IS : BELOW BOX --DICE; ON TOP OF THE BOX ARE JOKER STICKS.

    SBIR Phase I 2009 Department of DefenseDefense Microelectronics Activity
  9. Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-on–Chip (SoC) Applications on Silicon on Sapphire (SOS) Substrates

    SBC: Tahoe RF Semiconductor Inc.,            Topic: DMEA092002

    This proposal explores the feasibility of a communication system based on the modulation of a magnetic field. The principle of mutual induction states that the voltage induced by mutual induction in one inductor is always proportional to the rate of current change in the other inductor. If one inductor is in the transmitter, and the other inductor is in the receiver, the induced voltage in the r ...

    SBIR Phase I 2009 Department of DefenseDefense Microelectronics Activity
  10. Ultra Low-Power Miniaturized Flexible Radio Optimized for Long-Term Battery Operation

    SBC: CROSSFIELD TECHNOLOGY LLC            Topic: DMEA0703

    Crossfield intends to develop a single chip, low-power, flexible radio transceiver in ultrawideband technology that is battery operated and can support wireless sensor network applications not currently addressed by off-the-shelf wireless standards such as IEEE802.15.4. By implementing an ultrawideband (UWB) radio, a the power consumption can be reduced by an order of magnitude over existing radio ...

    SBIR Phase II 2009 Department of DefenseDefense Microelectronics Activity
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