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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Multilayer Capacitors Utilizing Phase Change Ceramics for High Energy Storage

    SBC: TRS CERAMICS, INC.            Topic: N/A

    For this Phase I SBIR program, high volumetric efficiency, energy storage capacitors are proposed using phase change ceramics. These materials are nonlinear dielectrics that make use of electric field induced antiferroelectric to ferroelectric phase transition to store more energy per volume than is possible with linear dielectrics (10 J/cm3 compared to 2 J/cm3). Furthermore phase change materia ...

    SBIR Phase II 1998 Department of DefenseNational Geospatial-Intelligence Agency
  2. Advanced HTI Payload Based on Hi-Therm Materials

    SBC: GENERAL SCIENCES INC            Topic: N/A

    On-going developmental programs have produced munitions systems which are capable of penetrating and functioning within hardened fixed ground targets. They are equipped with high explosive and fragmenting warheads to achieve target defeat but in the process produce unaccceptable target venting and agent dispersal. The need exists for a warhead payload which can effectively defeat chemical and bi ...

    SBIR Phase II 1998 Department of DefenseNational Geospatial-Intelligence Agency
  3. Enhanced Reliability of Radiation-hardened III-V Semiconductor-based Field Effect Transistors Using C-doped Low-temperature Buffer

    SBC: Quantum Epitaxial Designs,            Topic: N/A

    Low-temperature MBE grown GaAs (LT-GaAs) contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. In as-grown layers most of this excess As is in the form of As(Ga) antisite defects, of which only ~1% are ionized. Thermal annealing upon overgrowth with a device structure or during device processing results in a decrease of ...

    SBIR Phase I 1998 Department of DefenseNational Geospatial-Intelligence Agency
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