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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Development of a Miniature, Vibro-Mechanical Energy Harvester for Powering Wireless Sensors

    SBC: MicroStrain, Inc.            Topic: N07178

    A major barrier to the widespread adoption of wireless sensors for structural health monitoring is the requirement to power the network of wireless nodes. Batteries have a limited lifespan, adding significant size, weight, and costs to the wireless sensor network,and may represent a long term environmental problem. Battery maintenance can be eliminated by harvesting energy from the environment. Fo ...

    SBIR Phase II 2009 Department of DefenseNavy
  2. Control Surface Buffet Load Measurement

    SBC: MicroStrain, Inc.            Topic: N091013

    Structural monitoring of Navy aircraft is of critical importance as the fleet ages. One critical area includes the control surfaces, which are subject to intense, dynamic buffet loading which can lead to structural cracking. The highly transient nature of buffet loading makes it difficult to measure using conventional sensors. We propose to solve this problem by combining a network of time-synchro ...

    SBIR Phase I 2009 Department of DefenseNavy
  3. Bulk Composite Materials for Detection of Gamma Radiation

    SBC: Tetramer Technologies,L.L.C.            Topic: DTRA08005

    The objective of this proposal is to develop enabling technologies for the production of bulk scintillating nanocomposites that have the gamma radiation detection properties of single crystal NaI but with the manufacturability of plastic scintillators. These performance criteria may be met by developing nanoparticle polymer composites with ultra-high nanoparticle loadings levels in matrix with a h ...

    SBIR Phase II 2009 Department of DefenseDefense Threat Reduction Agency
  4. Normally-OFF AlInGaN MOSHFET for power converters

    SBC: Sensor Electronic Technology, Inc.            Topic: N09T023

    We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching frequen ...

    STTR Phase I 2009 Department of DefenseNavy
  5. Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

    SBC: Sensor Electronic Technology, Inc.            Topic: N07147

    We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface, III-Nitride HFET - based RF switches offer low insertion loss, lower than that of pin diodes and quite c ...

    SBIR Phase II 2009 Department of DefenseNavy

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