Award Data

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This SBIR project will bring about a major advance and improvement to existing meteorological data systems by utilizing new technological opportunities to develop a meteorological workstation merging data and graphics products from multiple independent systems to yield a single display system that permits efficient assimilation of the information by a user. This system would greatly enhance the ab ...

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THE HIGH TEMPERATURE STRENGTH OF CERAMIC MATERIALS MAKE THEM ATTRACTIVE FOR USE IN HIGH EFFICIENCY COMBUSTION ENGINES. UNFORTUNATELY, THE POOR FRICTION AND WEAR PROPERTIES OF COMMON CERAMICS OFTEN PRECLUDE THEIR USE IN ROTATING AND SLIDING COMPONENTS. SOLID STATE LUBRICANTS ARE A POTENTIAL SOLUTION TO THIS TRIBOLOGICAL PROBLEM BUT THEY ARE USUALLY INCOMPATIBLE WITH OXIDE-BASED CERAMICS. A TITANIUM ...

Silicon carbide promises near-term insertion in high power, high temperature, applications. The wide band-gap and consequent high breakdown field of silicon carbide theoretically allows efficient high power solid state power amplifiers. Its high thermal conductivity will permit compact devices and high power density. To date, virtually all silicon carbide-based devices have been fabricated using 6 ...

Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...