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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 1 - 10 of 119 results
 
  • Record 1 TO 119

  1. DEVELOPMENT OF TUNGSTEN BASED COMPOSITES

    SBC: 3c Systems, Inc.            Topic: N/A

    IT IS PROPOSED TO DEVELOP AND EMPLOY TWO ADVANCED TECHNOLOGICAL TOOLS IN THE CONTINUING R&D PROBLEM TO DEVELOP IMPROVED TUNGSTEN BASED COMPOSITE MATERIALS TO BE USED IN KINETIC ENERGY PENETRATORS: (1) THE HOT ISOSTATIC PRESSING (HIP) PROCESS WILL BE EMPLOYED TO FABRICATE THE MOST PROMISING TUNGSTEN-CERAMIC (CERMET) MATERIAL COMBINATIONS. (2) IN ORDER TO OBTAIN DYNAMIC MATERIAL PROPERTIES AND ULTIM ...

    SBIR Phase I 1991 Department of DefenseArmy

  2. HTSC CHANNELIZED RECEIVER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    RECENT ADVANCES IN HIGH TEMPERATURE SUPERCONDUCTING (HTSC) THIN FILM TECHNOLOGY ENABLE THE FABRICATION OF LOW-LOSS COMPONENTS THAT WILL IMPROVE THE COST AND PERFORMANCE OF CHANNELIZED RECEIVERS. CHANNELIZED RECEIVERS ARE USED IN SATELLITE TRANSPONDER, ELECTRONIC WARFARE AND ELECTRONICS INTELLIGENCE APPLICATIONS AND ARE COMPRISED OF A GROUP OF NARROW BAND RECEIVERS THAT COVER INDIVIDUAL SLOTS IN A ...

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency

  3. HTSC RECEIVE PHASED ARRAY ANTENNA

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SIGNIFICANT SIMPLIFICATION OF MICROWAVE PHASED ARRAY ANTENNA SYSTEM ARCHITECTURES CAN BE ACHIEVED WITH HTSC DEVICE TECHNOLOGY. ELIMINATION OF THE LOW NOISE AMPLIFIERS (LNAS) CAN BE ACCOMPLISHED THROUGH REPLACEMENT OF THE GAAS PHASE SHIFTERS WITH LOW LOSS HTSC COMPONENTS. A REDUCTION IN COMPLEXITY LOWERS BOTH SYSTEM WEIGHT ANDCOST. KEY TO HTSC TECHNOLOGY INSERTION IN PHASED ARRAY ANTENNAS IS THE DE ...

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency

  4. High Mobility Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseArmy

  5. CONTACTS FOR DIAMOND SEMICONDUCTOR DEVICES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseArmy

  6. MOCVD OF HTSC: PROCESS DEVELOPMENT FOR UNIFORM LARGE AREA GROWTH

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseArmy

  7. PROCESS MONITORING AND CONTROL DURING MOCVD OF FERROELECTRIC THIN FILMS

    SBC: ADVANCED FUEL RESEARCH, INC.            Topic: N/A

    FERROELECTRICS (FE) HAVE A LARGE COMMERCIAL POTENTIAL AS PIEZOELECTRIC ELEMENTS, DIELECTRICS FOR CAPACITORS, AND IN OPTICAL GUIDED-WAVE DEVICES. MATERIALS PROCESSING HAS LIMITED APPLICATIONS IN MICROELECTRONICS AND PHOTONICS, HOWEVER, AND FEW METHODS ARE CAPABLE OF DEPOSITING HIGH QUALITY THIN FILMS COMPATIBLE WITH STANDARD SI INTEGRATED CIRCUIT PROCESS TECHNOLOGY. METALORGANIC CHEMICAL VAPOR DEPO ...

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency

  8. HIGH TEMPERATURE OXYGEN INDEX APPARATUS

    SBC: ADVANCED FUEL RESEARCH, INC.            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseArmy

  9. BIST FOR OTS AND ASIC VLSI DESIGNS WITH VHDL

    SBC: ALTERNATIVE SYSTEM CONCEPTS, INC.            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseArmy

  10. RELAXOR FERROELECTRIC PB(MG1/3NB2/3)03 FOR THIN FILM CAPACITORS

    SBC: TRS CERAMICS, INC.            Topic: N/A

    THIS PROGRAM'S OBJECTIVE IS TO ESTABLISH THE RELAXOR FERROELECTRIC PB(MG1/2NBS/3)O3 (PMN) AS THE MATERIAL OF CHOICE FOR THIN FILM CAPACITORS IN DRAM AND ELECTRONIC PACKAGING APPLICATIONS.IN CONTRAST TO "NORMAL" FERROELECTRICS, E.G., BATIO3 AND PZT, RELAXORS OFFER HIGH DIELECTRIC CONSTANTS (K>10,000), BROAD PHASE TRANSITIONS,LOW E-FIELD DEPENDENCY OF K, AND LARGE RXC TIME CONSTANTS. IN ADDITION, TH ...

    SBIR Phase I 1991 Department of DefenseDefense Advanced Research Projects Agency
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