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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Graphical User Interface for Design of Hypersonic Vehicles

    SBC: Adaptive Research Corp.            Topic: N/A

    N/A

    SBIR Phase I 1993 National Aeronautics and Space Administration
  2. BIMETALLIC PRECURSORS FOR CHEMICAL VAPOR DEPOSITION

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHO ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  3. HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIB ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  4. A REAL-TIME X-RAY DETECTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    IN-SITU MONITORING OF CRITICAL MATERIAL PROPERTIES WOULD GREATLY ENHANCE PROCESS CONTROL OF A WIDE VARIETY OF MANUFACTURING TECHNOLOGIES. POSITION SENSITIVE FIBER OPTIC X-RAY SCINTILLATION DETECTORS (PSSD) CAN BE USED TO SIMULTANEOUSLY MEASURE SEVERAL CRITICAL SOLID POLYCRYSTALLINE MATERIAL PARAMETERS SUCH AS THICKNESS, CRYSTAL STRUCTURE, CRYSTAL PERFECTION, PREFERRED ORIENTATION, AND RESIDUAL STR ...

    SBIR Phase II 1993 Department of Energy
  5. IN-SITU X-RAY DETECTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    IN-SITU MONITORING OF CRITICAL FILM PROPERTIES WOULD GREATLY ENHANCE PROCESS CONTROL OF THIN FILM COATING TECHNOLOGIES SUCH AS CHEMICAL VAPOR DEPOSITION (CVD) AND PHYSICAL VAPOR DEPOSITION (PVD). ATM, WORKING IN CONJUNCTION WITH PENNSYLVANIA STATE UNIVERSITY, PROPOSES TO INCORPORATE A POSITION SENSITIVE FIBER OPTIC X-RAY SCINTILLATION DETECTOR (PSSD) FOR REAL TIME X-RAY ANALYSIS OF CHEMICALLY VAPO ...

    SBIR Phase II 1993 Department of DefenseDefense Advanced Research Projects Agency
  6. Negative Electron Affinity Diamond Vacuum Collector Transistor

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. Thick PLZT films for Integrated spatial light Modulators

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Over the past twenty years two-dimensional spatial light modulators (SLM's) have been identified as a critical element in a many applications. While large electro-optic effects can be engineered in composite structures such as multiple quantum-wells or liquid crystals, SLM's based on ceramic materials in the PbLaZrTiO3 (PLZT) family of compounds show a unique combination of high transparency iind ...

    SBIR Phase I 1993 Department of DefenseAir Force
  8. Electro-Optic PLZT Films for Monolithic Tunable Band-Pass Filters

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Electrically tunable optical filters have been identified as a critical element in many applications, including imaging and automated target recognition applications. While large electro-optic effects can be engineered in composite structures such as multiple quantum-wells or liquid crystals, SLMs based on ceramic materials in the PbLaZrTiO3 (PLZT) family of compounds show a unique combination of ...

    SBIR Phase I 1993 Department of DefenseAir Force
  9. Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  10. Residual Stress/fracture Modeling Of HTSC Films

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    High quality thin films of high temperature superconductor (HTSC) materials have been grown by a variety of methods. Independent of the growth method, residual stresses in large area HTSC/dielectric multi-layer films, resulting from both thermal expansion and lattice mismatch, continue to be a problem. In Phase I, ATM, working with Dr. Stewart Kurtz of Pennsylvania State University, will calculate ...

    SBIR Phase I 1993 Department of DefenseDefense Advanced Research Projects Agency
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