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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Arsine Abatement
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe continued use of arsine gas and/or its derivatives is vital to the manufacture of a wide variety of semiconductor devices. While the use of arsine is growing, it poses serious environmental and safety problems in the industry. New methods must be found that permit the facile trapping and detoxification of arsine and its derivatives. Advanced Technology Materials, Inc. (ATM) has gained a reputa ...
SBIR Phase II 1996 Department of DefenseAir Force -
High Performance Thin Film Microactuator Materials
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modificatio ...
SBIR Phase II 1996 Department of DefenseAir Force -
Stress Analyzer for Microelectronic Devices
SBC: Advanced Technologies/Laboratories Intl Topic: N/AMultilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a li ...
SBIR Phase II 1996 Department of DefenseAir Force -
COMPACT LOW-NOISE DIAMOND DYNODES
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATHE UNIQUE PROPERTIES OF SEMICONDUCTING DIAMOND MAY BE EXPLOITED TO CREATE NOVEL, COMPACT, LOW-NOISE PHOTON AND PARTICLE DETECTORS. PHOTOMULTIPLIER TUBES ARE THE DETECTOR OF CHOICE WHEN LIGHT LEVELS ARE LOW OR WHEN THE PROPER SIGNAL MUST BE EXTRACTED FROM A CLUTTERED BACKGROUND. CONTINUOUS DYNODES, KNOWN AS CHANNEL ELECTRON MULTIPLIERS, ARE WIDELY USED AS PARTICLE DETECTORS. INNOVATIVE CHANGES ...
SBIR Phase II 1996 National Science Foundation -
SiC accelerometers for harsh environments
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASensors and control electronics based on SiC offer an opportunity to realize systems with operating temperatures approaching 500 degrees C. The unique high temperature properties and chemical robustness of SiC make it an ideal choice for applications where generic components and sensors need to function under widely varying environmental conditions The wide range of environments in which military ...
SBIR Phase II 1996 Department of DefenseArmy -
High Brightness Blue LED's
SBC: Advanced Technologies/Laboratories Intl Topic: N/AA $1B commercial blue optoelectronics industry supplying full color displays, high speed communications systems, and high density optical recording devices will happen. The question is: which technology, II-VI materials, III-V nitrides, or silicon carbide and its alloys, will dominate? Theoretical calculations and experimental external quantum efficiencies combined favor a direct band gap material ...
SBIR Phase II 1996 Department of DefenseDefense Advanced Research Projects Agency -
BST Capacitors for Cryogenic Focal Plane Arrays
SBC: Advanced Technologies/Laboratories Intl Topic: N/AAlthough imaging in the 8-12 micron spectral region has widespread uses, high background radiation result sin low contrast, and charge storage in SiO2 capacitors limits the signal-to-noise and the upper limit of the dynamic range. A major opportunity exists to increase the performance of IR focal plan arrays (IRFPAs) using high dielectric constant BaSrTiO3 (BST) films to increase charge storage at ...
SBIR Phase II 1996 Department of DefenseArmy -
High Temperature Gallium Nitride-Based Sensors And Electronics
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase II 1996 National Aeronautics and Space Administration -
Low Loss Ferroelectric Thin Film Microwave Phase Shifter
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase II 1996 National Aeronautics and Space Administration -
HIGH TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTIONS ON SILICON SUBSTRATES FOR RF COMMUNICATIONS
SBC: ADVANCED FUEL RESEARCH, INC. Topic: N/AWe propose to develop manufacturable high-temperature superconducting (HTS) Josephson junctions on silicon substrates. This technology will make available a wide range of silicon fabrication methods, allowing superconducting and semiconducting circuit elements on the same chip. The ultimate goal is to provide high performance monolithic rf components combining active and passive superconducting co ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency