You are here
Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
-
Design, Manufacture, and Test of an Underwater Acoustic Intensity Probe
SBC: Acoustech Corporation Topic: N/AThe Acoustech Corporation as the prime contractor and the Pennsylvania State University - Applied Research Labc-atory as the subcontractor propose to design, manufacture, and test an underwater acoustic intensity probe containing a geophone and two-hydrophones encased in a neutrally buoyant package. The results of this proposed effort are anticipated to be highly successful since the researc ...
SBIR Phase I 1996 Department of DefenseOffice of the Secretary of Defense -
High Pressure Fuel Injected Stoichiometric Engine System
SBC: ADIABATICS INC Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseArmy -
Advanced Ground Vehicle Propulsion Technology- High Temperature Tribological Considerations
SBC: ADIABATICS INC Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseArmy -
SBIR PHASE I: MultiFACET- An Approach for Solving Large Scale Planning and Scheduling Problems
SBC: Adv Process Combinat Topic: N/AN/A
SBIR Phase I 1996 National Science Foundation -
Arsine Abatement
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe continued use of arsine gas and/or its derivatives is vital to the manufacture of a wide variety of semiconductor devices. While the use of arsine is growing, it poses serious environmental and safety problems in the industry. New methods must be found that permit the facile trapping and detoxification of arsine and its derivatives. Advanced Technology Materials, Inc. (ATM) has gained a reputa ...
SBIR Phase II 1996 Department of DefenseAir Force -
High Performance Thin Film Microactuator Materials
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modificatio ...
SBIR Phase II 1996 Department of DefenseAir Force -
Stress Analyzer for Microelectronic Devices
SBC: Advanced Technologies/Laboratories Intl Topic: N/AMultilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a li ...
SBIR Phase II 1996 Department of DefenseAir Force -
COMPACT LOW-NOISE DIAMOND DYNODES
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATHE UNIQUE PROPERTIES OF SEMICONDUCTING DIAMOND MAY BE EXPLOITED TO CREATE NOVEL, COMPACT, LOW-NOISE PHOTON AND PARTICLE DETECTORS. PHOTOMULTIPLIER TUBES ARE THE DETECTOR OF CHOICE WHEN LIGHT LEVELS ARE LOW OR WHEN THE PROPER SIGNAL MUST BE EXTRACTED FROM A CLUTTERED BACKGROUND. CONTINUOUS DYNODES, KNOWN AS CHANNEL ELECTRON MULTIPLIERS, ARE WIDELY USED AS PARTICLE DETECTORS. INNOVATIVE CHANGES ...
SBIR Phase II 1996 National Science Foundation -
SiC accelerometers for harsh environments
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASensors and control electronics based on SiC offer an opportunity to realize systems with operating temperatures approaching 500 degrees C. The unique high temperature properties and chemical robustness of SiC make it an ideal choice for applications where generic components and sensors need to function under widely varying environmental conditions The wide range of environments in which military ...
SBIR Phase II 1996 Department of DefenseArmy -
Lattice Matched III-V Nitride Heterostructures
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operati ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency