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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Radiation Hardened Low Power Variable Bandwidth/Resolution Sigma Delta Converters
SBC: MIAO IC DESIGN LLC Topic: AF131073ABSTRACT: By reducing radiation through rad-hard design, device modeling and manufacture process, we at MIAO LLC technology will provide a state of art solution for 130 nm CMOS/SOI space borne, 10 MHz bandwidth with over 114 dB signal-to noise ratio (SNR) delta-sigma analog-to-digital converters at Total Ionizing Dose greater than 1 MRads. The device power consuming is estimating less than 80 mW ...
SBIR Phase I 2014 Department of DefenseAir Force -
Aircraft Mission Planning Equipment (MPE) Obsolescence
SBC: Ludlum Measurements, Inc. Topic: AF132001ABSTRACT: A Universal Data Transfer Device (UDTD) is proposed which will standardize Data Transfer Devices used in various forms of aircraft. This proposal is for a Phase I effort that will investigate options for a new technology developing proposing new standard for digital, removable, ruggedized, plug compatible, upgradeable system with higher capacities than current systems and has the abilit ...
SBIR Phase I 2014 Department of DefenseAir Force -
Low CSWAP Multi-Beam TCDL Antenna System
SBC: Applied Radar, Inc. Topic: N132089Applied Radar proposes to develop a high-gain low cost, size, power and weight (low-CSWAP) tactical common data link (TCDL) antenna for the Firescout and Predator UAVs. The improved TCDL antenna will support 6 or more nodes of high-gain full-duplex communication at 21.42 MBPS in a star network configuration with 360 degree coverage out to 110 nm slant range. In Phase 1, we will design, fabricate a ...
SBIR Phase I 2014 Department of DefenseNavy -
Development of Adaptive Vorticity Confinement Based CFD Methodology for Rotorcraft Applications
SBC: ILLINOISROCSTAR LLC Topic: N132092The accurate representation of the rotor wake, especially the tip vortex structure, in a computationally efficient and algorithmically straight forward way is crucial for prediction of rotor aerodynamic performance, noise emission, and rotor structural dynamics. A promising approach for design and optimization is the vorticity confinement (VC) method that minimizes the numerical diffusion of vorti ...
SBIR Phase I 2014 Department of DefenseNavy -
Ultra-Broadband, High Dynamic Range Receiver System
SBC: ALPHACORE INC Topic: N132098The objective of this proposal is to demonstrate the feasibility of an ultra-broadband, high dynamic range receiver system for signal capture, storage, and analysis. The significance of this innovation lies in generating significant cost savings in testing military receiver systems through stimulation via playback of high-fidelity recordings at RF frequencies. Optimization and testing can now be p ...
SBIR Phase I 2014 Department of DefenseNavy -
Radar Imaging Guidance
SBC: IMSAR LLC Topic: N132107Radar sensor suites used by seekers and ISR platforms frequently must collect multiple types of radar data. In addition to moving target indication (MTI) data used for target tracking (tracking data), such systems often also collect high resolution radar information about specific targets in order to facilitate automatic target recognition (ATR) or classification (ATR data). This ATR data can incl ...
SBIR Phase I 2014 Department of DefenseNavy -
Advanced Helo Display for Zero-Zero Shipboard Landings
SBC: KUTTA TECHNOLOGIES, INC. Topic: N132133As a primary developer of Radio Technical Commission for Aeronautics (RTCA) DO-178C applications for manned and unmanned systems, Kutta is keenly aware of human machine interface (HMI) interaction issues in fixed-wing and rotary wing platforms. For this effort Kutta proposes to develop an Advanced Landing and Display System (ALDS) for use in Degraded Visual Environments (DVE). ALDS will assist in ...
SBIR Phase I 2014 Department of DefenseNavy -
20-year Lithium Primary battery for Missile-Implantable Corrosion Monitoring Systems and as Primary Power Sources for mini-UAVs
SBC: AMERICAN ENERGY TECHNOLOGIES CO Topic: DLA122002American Energy Technologies Co., a woman-owned small business concern of Illinois will partner with Lockheed Martin Corp"s Missions Systems and Sensors and with Analog Devices, in order to develop and demonstrate a new and improved primary battery capable of delivering up to two thirds of the energy density of gasoline as employed in an internal combustion engine, and up to 6.5 times the specific ...
SBIR Phase I 2014 Department of DefenseDefense Logistics Agency -
Compact and Integrated IMU for GPS Denied Navigation Using Fast-Light Gyroscopes and Accelerometers
SBC: DIGITAL OPTICS TECHNOLOGIES INC Topic: AF112100ABSTRACT:For GPS denied navigation, there is a need for developing inertial measurement units (IMU), employing gyroscopes and accelerometers, with better accuracy and/or smaller volume and weight than the state of the art.Under Phase I, we have established the feasibility of realizing a superluminal ring laser gyroscope (SRLG) and a superluminal ring laser accelerometer (SRLA), based on diode-pump ...
SBIR Phase II 2014 Department of DefenseAir Force -
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off [Phase IIS]
SBC: MICROLINK DEVICES INC Topic: 1In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase II 2014 Department of EnergyARPA-E