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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Arsine Abatement

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continued use of arsine gas and/or its derivatives is vital to the manufacture of a wide variety of semiconductor devices. While the use of arsine is growing, it poses serious environmental and safety problems in the industry. New methods must be found that permit the facile trapping and detoxification of arsine and its derivatives. Advanced Technology Materials, Inc. (ATM) has gained a reputa ...

    SBIR Phase II 1996 Department of DefenseAir Force
  2. High Performance Thin Film Microactuator Materials

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modificatio ...

    SBIR Phase II 1996 Department of DefenseAir Force
  3. Stress Analyzer for Microelectronic Devices

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Multilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a li ...

    SBIR Phase II 1996 Department of DefenseAir Force
  4. SiC accelerometers for harsh environments

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Sensors and control electronics based on SiC offer an opportunity to realize systems with operating temperatures approaching 500 degrees C. The unique high temperature properties and chemical robustness of SiC make it an ideal choice for applications where generic components and sensors need to function under widely varying environmental conditions The wide range of environments in which military ...

    SBIR Phase II 1996 Department of DefenseArmy
  5. Lattice Matched III-V Nitride Heterostructures

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operati ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  6. High Temperature SiC Power MOSFETs

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Large power handling systems of 1KW to 150KW are required in a many applications ranging from aerospace to consumer electronics to industrial power systems and transportation. Conventional electronic systems, based on silicon or gallium arsenide devices, require a large number of devices enhanced with extra heat sinking and sophisticated control systems to ensure synchronous operation. The extra ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. In-Cylinder Micromachined Pressure Transducers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Increasingly strict emissions requirements and the need to increase fuel economy and reduce service intervals have dramatically accelerated the use of monitor and control electronics in engines. traditional methods such as adjusting the air/fuel ratio to optimize catalyst performance are not effective enough to meet future requirements. Measurement of the pressure in each cylinder permits enhanc ...

    SBIR Phase I 1996 Department of DefenseArmy
  8. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase I 1996 Department of DefenseAir Force
  9. High Brightness Blue LED's

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    A $1B commercial blue optoelectronics industry supplying full color displays, high speed communications systems, and high density optical recording devices will happen. The question is: which technology, II-VI materials, III-V nitrides, or silicon carbide and its alloys, will dominate? Theoretical calculations and experimental external quantum efficiencies combined favor a direct band gap material ...

    SBIR Phase II 1996 Department of DefenseDefense Advanced Research Projects Agency
  10. BST Capacitors for Cryogenic Focal Plane Arrays

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Although imaging in the 8-12 micron spectral region has widespread uses, high background radiation result sin low contrast, and charge storage in SiO2 capacitors limits the signal-to-noise and the upper limit of the dynamic range. A major opportunity exists to increase the performance of IR focal plan arrays (IRFPAs) using high dielectric constant BaSrTiO3 (BST) films to increase charge storage at ...

    SBIR Phase II 1996 Department of DefenseArmy
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