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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Tunable Laser Radar Source

    SBC: Aculight Corporation            Topic: N/A

    Aculight proposes the development of a frequency tunable source suitable for LADAR measurements from compact military platforms. The source will use a fixed frequency diode pumped solid state drive laser and an optical parametric oscillator, tunable from 1.6 to 2.4 microns. Output energies will be over 100 micro-J through the spectral range at pulse rates of 10kHz. The major technical challenge, ...

    SBIR Phase II 1996 Department of DefenseAir Force
  2. 1-3 Micron Tunable Diode Pumped Solid State Laser Sources

    SBC: Aculight Corporation            Topic: N/A

    High pulse energy, high repetition rate, tunable, narrowband sources are needed for optical pumping of mid-infrared gas laser converters. The source needs continuous tunability over the 1-3 micron band to access different overtone bands in various gaseous gain media. Due to the need for diode pumping of the source, efficiency is critical to minimizing diode costs. Our approach is efficient gene ...

    SBIR Phase II 1996 Department of DefenseAir Force
  3. Compact, High Pulse Rate, Mid-Infrared laser

    SBC: Aculight Corporation            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseNavy
  4. CW Mid-Infrared Tandem OPO Source

    SBC: Aculight Corporation            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseAir Force
  5. Arsine Abatement

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continued use of arsine gas and/or its derivatives is vital to the manufacture of a wide variety of semiconductor devices. While the use of arsine is growing, it poses serious environmental and safety problems in the industry. New methods must be found that permit the facile trapping and detoxification of arsine and its derivatives. Advanced Technology Materials, Inc. (ATM) has gained a reputa ...

    SBIR Phase II 1996 Department of DefenseAir Force
  6. High Performance Thin Film Microactuator Materials

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modificatio ...

    SBIR Phase II 1996 Department of DefenseAir Force
  7. Stress Analyzer for Microelectronic Devices

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Multilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a li ...

    SBIR Phase II 1996 Department of DefenseAir Force
  8. SiC accelerometers for harsh environments

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Sensors and control electronics based on SiC offer an opportunity to realize systems with operating temperatures approaching 500 degrees C. The unique high temperature properties and chemical robustness of SiC make it an ideal choice for applications where generic components and sensors need to function under widely varying environmental conditions The wide range of environments in which military ...

    SBIR Phase II 1996 Department of DefenseArmy
  9. Lattice Matched III-V Nitride Heterostructures

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operati ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  10. High Temperature SiC Power MOSFETs

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Large power handling systems of 1KW to 150KW are required in a many applications ranging from aerospace to consumer electronics to industrial power systems and transportation. Conventional electronic systems, based on silicon or gallium arsenide devices, require a large number of devices enhanced with extra heat sinking and sophisticated control systems to ensure synchronous operation. The extra ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency

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