List

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. NOVEL POLYPARAPHENYLENE COMPOSITE ABLATIVE MATERIALS FOR USE AS RAMJET COMBUSTOR INSULATION

    SBC: MISSISSIPPI POLYMER TECHNOLOGIES, INC.            Topic: N02165

    The development of lighter weight insulation with improved thermal and ablative properties is vital to the future success of ducted rocket/ramjet technology currently being developed in the United States. In Phase I, novel composite ablative materials were fabricated from Parmaxr SRP (Self-Reinforced Polymers) and carbon fibers and shown to possess numerous advantages over the current technology ...

    SBIR Phase II 2004 Department of DefenseNavy
  2. Polymer-Cased Ammunition for Small Arms and Cannon Ammunition

    SBC: MISSISSIPPI POLYMER TECHNOLOGIES, INC.            Topic: N03005

    Mississippi Polymer Technologies Inc. (MPT) proposes to develop a new generation of polymeric lightweight ammunition weighing approximately 1/3 less than existing brass ammunition. Previous efforts to develop polymer-cased ammunition have failed primarily because of problems associated with choice of case materials. During Phase I, MPT has demonstrated proof of concept overcoming these issues. D ...

    SBIR Phase II 2004 Department of DefenseNavy
  3. Lightweight Passive Fire Protection System for Composite Structures

    SBC: MISSISSIPPI POLYMER TECHNOLOGIES, INC.            Topic: N04085

    Mississippi Polymer Technologies (MPT) proposes to protect composite ship structures with novel, lightweight flame resistant insulation composed foamed Parmaxr Self-Reinforced Polymers ("SRPs") compounded with carbon fibers. Parmaxr SRPs are extraordinary thermoplastic polymers that do not melt or drip at high temperatures but form a durable, insulative char layer. Parmaxr SRPs have the potentia ...

    SBIR Phase I 2004 Department of DefenseNavy
  4. Model-driven Architecture for Inter-component Dependency, Fault-tolerance, and Execution Environment Reconfigurability

    SBC: MPI SOFTWARE TECHNOLOGY, INC.            Topic: N03207

    Large-scale engineering systems require very large real-time computation. The computers that effect on-line processing must be extremely reliable, because of the large cost of operating the facilities and because of the potential loss of data or inability to deliver critical functionality in response to real-time threats. Standard, redundant fault tolerant strategies and mechanisms are inappropr ...

    SBIR Phase I 2004 Department of DefenseNavy
  5. Structurally Efficient, Low-Cost Joining Techniques

    SBC: SEEMANN COMPOSITES, INC.            Topic: N04093

    Z-axis stitching offers improved performance and greatly increased damage tolerance for composite to composite joints (CTC). Z-axis stitching is employed in aircraft applications using complex, double-sided stitch machinery developed by NASA. This technology is very expensive, but offers increased damage tolerance to airframe structures. The team has identified stitching technology which could ...

    SBIR Phase I 2004 Department of DefenseNavy
  6. Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

    SBC: SemiSouth Laboratories            Topic: MDA02021b

    SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be processed, allowing for thousands of parts to be delivered to system integrators. Parts will be delivered to system integrators, load-pull RF tested, and feedback will be used to modify process and lay ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  7. Thick SiC Epitaxy Development for MegaWatt Switching Applications

    SBC: SemiSouth Laboratories            Topic: SB032044

    In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and feed gas ratios, gas flow rates, pressure, temperature) to increase the growth rate are balanced with keeping process parameters such that surface morphology is not compromised is the primary goal of ...

    SBIR Phase I 2004 Department of DefenseAir Force
  8. Self-aligned L-band SiC Power MESFET with Improved Current Stability for Ballistic Missile Defense Systems

    SBC: SemiSouth Laboratories            Topic: MDA04039

    In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved, smoother surface silicide process. This work complements ongoing work involving a major prime contracto ...

    SBIR Phase I 2004 Department of DefenseMissile Defense Agency
  9. Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

    SBC: SemiSouth Laboratories            Topic: MDA04T019

    SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for high-temperature behavior, much less data is available for radiation effects, including gamma and pro ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  10. Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

    SBC: SemiSouth Laboratories            Topic: BMDO02T00

    SiC Integrated Circuits (IC''s) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC''s from Mississippi State University to SemiSouth Laboratories. The result will be precise controlled epitaxy layers (doping ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government