Award Data

We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching frequen ...

We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface, III-Nitride HFET - based RF switches offer low insertion loss, lower than that of pin diodes and quite c ...

The proposed effort focuses upon exploring the potential of a combination of neural, wavelet, and fuzzy logic processing to yield significant performance improvements needed for future seeker scene processors. Seeker scene processors must rapidly process images to detect and classify objects such as tanks on the ground, aircraft in flight, or ships at sea. The problem of detecting and classifyin ...

This project will explore the potential of neural network and wavelet algorithms to yield significant performance improvements needed for future acoustic detection and classification systems. Future systems must automatically recognize complex acoustic signatures in realistic environments. Neural and wavelet algorithms open new possibilities for designing sonar systems by offering the poten ...