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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. Thickness Measurement Technology for Thin Films on Sapphire Substrate

    SBC: Advanced Cooling Technologies, Inc.            Topic: DMEA16B001

    Silicon-on-sapphire (SOS) integrated circuits have achieved popularity due to their high speed performance and low power consumption in radio frequency applications. An important aspect of the SOS fabrication process that must be verified to maximize yield is the thickness of the thin films deposited on the sapphire substrate. However, due to the transparent nature of sapphire, current optical met ...

    STTR Phase II 2018 Department of DefenseDefense Microelectronics Activity
  2. Computerized Robotic Delayering and Polishing System

    SBC: Spectral Energies, LLC            Topic: DMEA172001

    The proposed research and technical objectives in this project deal with computerized automatic delayering and polishing system that would be applicable to both commercial and government semiconductor device research and development with applications including Failure Analysis (FA), Fault Isolation (FI), and Reverse Engineering (RE) of semiconductor microelectronic devices. This project could help ...

    SBIR Phase I 2018 Department of DefenseDefense Microelectronics Activity
  3. A Modular Cluster Tool for Semiconductor Failure Analysis

    SBC: Square One Systems Design            Topic: DMEA172001

    Advanced semiconductor devices are the beating heart of 21st Century technology.The mission critical role that these devices play demands exceptional levels of reliability.When a semiconductor device does fails, it is essential that the cause of the failure is identified as quickly as possible.Because a devices chip is encapsulated in a thermoplastic package, a significant amount of intricate mate ...

    SBIR Phase I 2018 Department of DefenseDefense Microelectronics Activity
  4. Holographic Projection Laser Marking System (HoloMark)

    SBC: Luminit LLC            Topic: DMEA172002

    To address the DMEA need for Through-Lens Fiducial Marking System, Luminit, LLC proposes to develop a new Holographic Projection Laser Marking System (HoloMark). This proposed device is based on a new design that utilizes Luminit-developed mature components like computer-generated hologram technology. The innovation will enable precise, fast and lower cost marks on any substrate, consistent with t ...

    SBIR Phase I 2018 Department of DefenseDefense Microelectronics Activity
  5. Through-Lens Fiducial Marking System

    SBC: INFRARED LABORATORIES INCORPORATED            Topic: DMEA172002

    Infrared emission microscope (IREM) systems are used to image active integrated circuits to analyze circuit function or locate manufacturing and design defects. IREM systems are able to directly image the operation of individual transistors or transistor groups that form logic gates. Depending on lenses used, an IREM system can resolve features smaller than 100 nm. Once an area of interest (AOI) i ...

    SBIR Phase I 2018 Department of DefenseDefense Microelectronics Activity
  6. Laser Alignment and Infrared Inspection

    SBC: PHYSICAL OPTICS CORPORATION            Topic: DMEA172002

    To address the DMEAs need to perform failure analysis on microelectronic components using infrared microscope systems to locate areas of interest and then navigate accurately to these same locations in a focused ion beam tool, Physical Optics Corporation (POC) proposes to develop a new Laser Alignment and Infrared Inspection (LAIRI) system. It is based upon the integration of a state-of-the-art co ...

    SBIR Phase I 2018 Department of DefenseDefense Microelectronics Activity
  7. Through-Lens Fiducial Marking System

    SBC: Checkpoint Technologies LLC            Topic: DMEA172002

    The objective of this proposal is to demonstrate the feasibility of the innovative development of a tool that can be integrated into an IR microscope that is able to create fiducial marks on the surface of the backside of silicon.The current state-of-art in semiconductor device analysis involves procedures that begin with the identification of areas of interest under an IR microscope and then thos ...

    SBIR Phase I 2018 Department of DefenseDefense Microelectronics Activity
  8. In-situ Fiducial Marker

    SBC: Hedgefog Research Inc.            Topic: DMEA172002

    To address the DMEA's need for a through-lens fiducial marker technology in semiconductor device inspection, Hedgefog Research Inc. (HFR) proposes to develop a new In-situ Fiducial Marker (IFM), based on laser-activated, electrostatically assisted marking at designated spots. Novel system features in IFM will enable non-destructive fiducial marking (diameter < 5 micron) in real time while operatin ...

    SBIR Phase I 2018 Department of DefenseDefense Microelectronics Activity
  9. Analysis of Integrated Circuits Using Limited X-rays

    SBC: TANGENT SCIENCES LLC            Topic: DMEA152002

    XRadIC establishes an automated software framework to non-destructively analyze cutting edge microelectronics using photon flux-limited x-ray microscope systems. XRadIC couples on-the-fly sample scanning with online optimized 2D and 3D image analysis algorithms to maximize overall system throughput by dynamically minimizing the number of viewing angles and exposure times needed to analyze a given ...

    SBIR Phase II 2018 Department of DefenseDefense Microelectronics Activity
  10. Thickness Measurement Technology for Thin Films on Sapphire Substrate

    SBC: Advanced Cooling Technologies, Inc.            Topic: DMEA16B001

    Silicon-on-sapphire (SOS) integrated circuits are attracting attention due to their high speed performance and low power consumption. An important aspect of the SOS fabrication process that must be verified to maximize yield is the thickness of the thin films deposited on the sapphire substrate. However, due to the transparent nature of sapphire, current optical metrology tools are not applicable. ...

    STTR Phase I 2017 Department of DefenseDefense Microelectronics Activity

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